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| PartNumber | ZXMN6A08E6TA | ZXMN6A08E6QTA | ZXMN6A08E6 , LN2117B025M |
| Description | MOSFET 60V N-Chnl UMOS | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-26-6 | SOT-26-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 3.5 A | 2.5 A | - |
| Rds On Drain Source Resistance | 80 mOhms | 150 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 5.8 nC | 5.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.1 W | 8.8 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.3 mm | - | - |
| Length | 3.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZXMN6A0 | ZXMN6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 1.8 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 6.6 S | 6.6 S | - |
| Fall Time | 4.6 ns | 4.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.1 ns | 2.1 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 12.3 ns | 12.3 ns | - |
| Typical Turn On Delay Time | 2.6 ns | 2.6 ns | - |
| Unit Weight | 0.000282 oz | - | - |
| Qualification | - | AEC-Q101 | - |