ZXT953

ZXT953KTC vs ZXT953 vs ZXT953K

 
PartNumberZXT953KTCZXT953ZXT953K
DescriptionBipolar Transistors - BJT PNP 100V
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseDPAK-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max- 100 V--
Collector Base Voltage VCBO140 V--
Emitter Base Voltage VEBO- 7 V--
Collector Emitter Saturation Voltage- 335 mV-- 335 mV
Maximum DC Collector Current5 A-5 A
Gain Bandwidth Product fT125 MHz-125 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesZXT953-ZXT953
Height2.39 mm--
Length6.73 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width6.22 mm--
BrandDiodes Incorporated--
Pd Power Dissipation4200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.009185 oz-0.009185 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type--Surface Mount
Supplier Device Package--TO-252-3
Power Max--4.2W
Transistor Type--PNP
Current Collector Ic Max--5A
Voltage Collector Emitter Breakdown Max--100V
DC Current Gain hFE Min Ic Vce--100 @ 1A, 1V
Vce Saturation Max Ib Ic--390mV @ 500mA, 5A
Current Collector Cutoff Max--20nA (ICBO)
Frequency Transition--125MHz
Pd Power Dissipation--4200 mW
Collector Emitter Voltage VCEO Max--- 100 V
Collector Base Voltage VCBO--140 V
Emitter Base Voltage VEBO--- 7 V
DC Collector Base Gain hfe Min--100 at 10 mA at 1 V 100 at 1 A at 1 V 50 at 3 A at 1 V 15 at 5 A at 1 V
DC Current Gain hFE Max--100
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
ZXT953KTC Bipolar Transistors - BJT PNP 100V
ZXT953 全新原裝
ZXT953K 全新原裝
ZXT953KTC Bipolar Transistors - BJT PNP 100V
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