SIHP12N65E-GE3

SIHP12N65E-GE3
Mfr. #:
SIHP12N65E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 650V Vds 30V Vgs TO-220AB
生命週期:
製造商新產品
數據表:
SIHP12N65E-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SIHP12N65E-GE3 DatasheetSIHP12N65E-GE3 Datasheet (P4-P6)SIHP12N65E-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SIHP12N65E-GE3 更多信息
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220AB-3
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
12 A
Rds On - 漏源電阻:
380 mOhms
Vgs th - 柵源閾值電壓:
4 V
Vgs - 柵源電壓:
30 V
Qg - 門電荷:
35 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
156 W
頻道模式:
增強
打包:
管子
系列:
E
品牌:
威世 / Siliconix
秋季時間:
18 ns
產品類別:
MOSFET
上升時間:
19 ns
出廠包裝數量:
50
子類別:
MOSFET
典型關斷延遲時間:
35 ns
典型的開啟延遲時間:
16 ns
單位重量:
0.211644 oz
Tags
SIHP12N6, SIHP12N, SIHP12, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 650 V 156 W 0.38 O 70 nC Flange Mount Power MOSFET -TO-220AB
***ark
Mosfet, N-Ch, 650V, 12A, To-220Ab Rohs Compliant: Yes
***ronik
N-CH 650V 12A 380mOhm TO220-3
***S
new, original packaged
***
650V N-CHANNEL
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHP12N65E-GE3
DISTI # V36:1790_09218761
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant
0
  • 1000000:$1.0430
  • 500000:$1.0470
  • 100000:$1.4240
  • 10000:$2.1380
  • 1000:$2.2600
SIHP12N65E-GE3
DISTI # SIHP12N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 12A TO-220AB
Min Qty: 1
Container: Tube
18In Stock
  • 5000:$1.0174
  • 2500:$1.0328
  • 1000:$1.1093
  • 500:$1.3388
  • 100:$1.6295
  • 10:$2.0270
  • 1:$2.2600
SIHP12N65E-GE3
DISTI # SIHP12N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP12N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.9808
  • 6000:$1.0079
  • 4000:$1.0366
  • 2000:$1.0805
  • 1000:$1.1135
SIHP12N65E-GE3
DISTI # 78-SIHP12N65E-GE3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant
45
  • 1:$2.2600
  • 10:$1.9100
  • 100:$1.6200
  • 500:$1.5400
  • 1000:$1.1000
  • 2500:$1.0300
  • 5000:$1.0100
SIHP12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant
Americas -
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    PJ-082BH

    Mfr.#: PJ-082BH

    OMO.#: OMO-PJ-082BH

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    RB161QS-40T18R

    Mfr.#: RB161QS-40T18R

    OMO.#: OMO-RB161QS-40T18R-ROHM-SEMI

    Schottky Diodes & Rectifiers Schtky Br 40V Vr/Vrm 1A Io 3A IFRM RASMID
    FDS6679AZ

    Mfr.#: FDS6679AZ

    OMO.#: OMO-FDS6679AZ-ON-SEMICONDUCTOR

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    可用性
    庫存:
    55
    訂購:
    2038
    輸入數量:
    SIHP12N65E-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$2.61
    US$2.61
    10
    US$2.35
    US$23.50
    100
    US$1.89
    US$189.00
    500
    US$1.47
    US$735.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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