 |  | | |
| PartNumber | SIHP12N50C-E3 | SIHP125N60EF-GE3 | SIHP120N60E-GE3 |
| Description | MOSFET N-Channel 500V | MOSFET EF Series Power MOSFET With Fast Body Diode | MOSFET 650V Vds; 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 600 V | 600 V |
| Id Continuous Drain Current | 12 A | 25 A | 25 A |
| Rds On Drain Source Resistance | 555 mOhms | 109 mOhms | 120 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 32 nC | 31 nC | 45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | - | 179 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | - | Tube |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 6 ns | 20 ns | 33 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | 33 ns | 65 ns |
| Factory Pack Quantity | 50 | - | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 33 ns | 31 ns |
| Typical Turn On Delay Time | 18 ns | 19 ns | 19 ns |
| Unit Weight | 0.211644 oz | - | - |
| Tradename | - | TrenchFET | - |
| Series | - | EF | E |
| Transistor Type | - | - | 1 N-Channel |
| Forward Transconductance Min | - | - | 6 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP12N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | |
| SIHP12N50C-E3 | MOSFET N-Channel 500V | ||
| SIHP12N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP12N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
| SIHP125N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
| SIHP120N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-220AB | ||
| SIHP12N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP12N65E-GE3 | IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS | |
| SIHP12N60E-GE3 | IGBT Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | ||
| SIHP12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHP12N50C-E3 | MOSFET N-CH 500V 12A TO-220AB | ||
| SIHP12N60E-E3 | MOSFET N-CH 600V 12A TO220AB | ||
| SIHP120N60E-GE3 | E Series Power MOSFET TO-220AB, 120 m @ 10V | ||
| SIHP1260EGE3 | 全新原裝 | ||
| SIHP12N50 | 全新原裝 | ||
| SIHP12N50C | 全新原裝 | ||
| SIHP12N50C-E3,P12N50C | 全新原裝 | ||
| SIHP12N50CE3 | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHP12N60E | 全新原裝 | ||
| SIHP12N65E | 全新原裝 |