NGTB35N65FL2WG

Mfr. #:: NGTB35N65FL2WG
製造商:: ON Semiconductor
描述:: IGBT Transistors 650V/35A FAST IGBT FSII T
生命週期:: 製造商新產品
數據表:: NGTB35N65FL2WG 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB35N65FL2WG Datasheet NGTB35N65FL2WG Datasheet (P4-P6)NGTB35N65FL2WG Datasheet (P7-P8)
ECAD Model:
更多信息:: NGTB35N65FL2WG 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 650 V

集電極-發射極飽和電壓：: 2.2 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 70 A

Pd - 功耗：: 300 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

打包：: 管子

連續集電極電流 Ic 最大值：: 70 A

品牌：: 安森美半導體

柵極-發射極漏電流：: 200 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 30

子類別：: IGBT

單位重量：: 1.340411 oz

Tags: NGTB35, NGTB3, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB35N65FL2WG 描述

***ical: Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube

***ied Electronics & Automation: NGTB35N65FL2WG; IGBT Transistor; 70 A 650 V; 1MHz; 3-Pin TO-247

***ure Electronics: NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

NGTB35N65FL2WG 更多信息

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

型號	製造商	描述	庫存	價格
NGTB35N65FL2WG DISTI # NGTB35N65FL2WGOS-ND	ON Semiconductor	IGBT 650V 70A 300W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	107In Stock	1020:$1.6464 510:$1.9522 120:$2.2932 30:$2.6460 1:$3.1200
NGTB35N65FL2WG DISTI # NGTB35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG) Min Qty: 202 Container: Bulk	Americas - 0	202:$1.5900 204:$1.5900 406:$1.4900 1010:$1.4900 2020:$1.4900
NGTB35N65FL2WG DISTI # NGTB35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.3900 10:$1.3900 25:$1.3900 50:$1.3900 100:$1.3900 500:$1.3900 1000:$1.2900
NGTB35N65FL2WG. DISTI # 61AC1092	ON Semiconductor	DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	21	1000:$1.2900 1:$1.3900
NGTB35N65FL2WG DISTI # 70547360	ON Semiconductor	NGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$2.9600 20:$2.8200 50:$2.6800 100:$2.5500 200:$2.4200
NGTB35N65FL2WG DISTI # 863-NGTB35N65FL2WG	ON Semiconductor	IGBT Transistors 650V/35A FAST IGBT FSII T RoHS: Compliant	901	1:$2.9700 10:$2.5200 100:$2.1900 250:$2.0800 500:$1.8600 1000:$1.5700 2500:$1.4900 5000:$1.4400
NGTB35N65FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	210	1000:$1.6300 500:$1.7200 100:$1.7900 25:$1.8700 1:$2.0100
NGTB35N65FL2WG DISTI # 8427898P	ON Semiconductor	IGBT FIELD STOP II 650V 35A DIODE TO247, TU	284	40:£1.7950 20:£1.8900
NGTB35N65FL2WG	ON Semiconductor		2361

相關產品

圖片	型號	描述
	Mfr.#: DP83822IFRHBR OMO.#: OMO-DP83822IFRHBR	Ethernet ICs 10/100 ENET PHY
	Mfr.#: LMR23625CDDAR OMO.#: OMO-LMR23625CDDAR	Switching Voltage Regulators 36V, 2.5A, 2.1MHz Synchronous Regulator
	Mfr.#: ECW-FE2W335J OMO.#: OMO-ECW-FE2W335J	Film Capacitors 3.3uF 450VDC 5% MPP L/S=22.5mm
	Mfr.#: RC0603FR-071KL OMO.#: OMO-RC0603FR-071KL	Thick Film Resistors - SMD 1K OHM 1%
	Mfr.#: DP83822IFRHBR OMO.#: OMO-DP83822IFRHBR-TEXAS-INSTRUMENTS	IC TXRX ETHERNET 32VQFN
	Mfr.#: AC0603KRX7R9BB102 OMO.#: OMO-AC0603KRX7R9BB102-YAGEO	Cap Ceramic 0.001uF 50V X7R 10% SMD 0603 125C Automotive
	Mfr.#: AC0603KRX7R9BB473 OMO.#: OMO-AC0603KRX7R9BB473-YAGEO	Cap Ceramic 0.047uF 50V X7R 10% SMD 0603 125C Automotive T/R
	Mfr.#: 890303428008CS OMO.#: OMO-890303428008CS-WURTH-ELECTRONICS	Film Capacitors WCAP-FTBE 630V 3.3uF 10%
	Mfr.#: C4AEHBU4330A1WJ OMO.#: OMO-C4AEHBU4330A1WJ-KEMET	Cap Film 3.3uF 600V PP 5% (31.5 X 11 X 20mm) Radial 27.5mm 0.017 Ohm 85C Bulk
	Mfr.#: RC0603JR-070RL OMO.#: OMO-RC0603JR-070RL-YAGEO	Thick Film Resistors - SMD ZERO OHM JUMPER