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NGTB35

NGTB35N60FL2WG vs NGTB35N60FL2W vs NGTB35N65FL2

 
PartNumberNGTB35N60FL2WGNGTB35N60FL2WNGTB35N65FL2
DescriptionIGBT Transistors 600V/35A FAST IGBT FSII T
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole-Through Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.2 V-2.2 V
Maximum Gate Emitter Voltage20 V-20 V
Continuous Collector Current at 25 C70 A-70 A
Pd Power Dissipation300 W--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
PackagingTube-Tube
Continuous Collector Current Ic Max70 A-70 A
BrandON Semiconductor--
Gate Emitter Leakage Current200 nA-200 nA
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight1.340411 oz-1.340411 oz
Series---
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247
Power Max--300W
Reverse Recovery Time trr--68ns
Current Collector Ic Max--70A
Voltage Collector Emitter Breakdown Max--650V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--120A
Vce on Max Vge Ic--2V @ 15V, 35A
Switching Energy--840μJ (on), 280μJ (off)
Gate Charge--125nC
Td on off 25°C--72ns/132ns
Test Condition--400V, 35A, 10 Ohm, 15V
Pd Power Dissipation--300 W
Collector Emitter Voltage VCEO Max--650 V
製造商 型號 描述 RFQ
NGTB35N65FL2WG IGBT Transistors 650V/35A FAST IGBT FSII T
NGTB35N60FL2WG IGBT Transistors 600V/35A FAST IGBT FSII T
NGTB35N60FL2W 全新原裝
NGTB35N65FL2 全新原裝
ON Semiconductor
ON Semiconductor 		NGTB35N65FL2WG IGBT Transistors 650V/35A FAST IGBT FSII T
NGTB35N60FL2WG IGBT Transistors 600V/35A FAST IGBT FSII T
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