STB47N60DM6AG

STB47N60DM6AG
Mfr. #:
STB47N60DM6AG
製造商:
STMicroelectronics
描述:
MOSFET Automotive-grade N-channel 600 V, 0.070 typ., 36 A MDmesh DM6 Power MOSFET in a D PAK package
生命週期:
製造商新產品
數據表:
STB47N60DM6AG 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STB47N60DM6AG 更多信息 STB47N60DM6AG Product Details
產品屬性
屬性值
製造商:
意法半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
D2PAK-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
36 A
Rds On - 漏源電阻:
80 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
25 V
Qg - 門電荷:
55 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
250 W
配置:
單身的
頻道模式:
增強
資質:
AEC-Q101
商品名:
網狀網
打包:
捲軸
系列:
STB47N60DM6AG
晶體管類型:
1 N-Channel
品牌:
意法半導體
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
5.5 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
57 ns
典型的開啟延遲時間:
23 ns
Tags
STB4, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh DM6 N-channel Power MOSFETs
STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive grade N-channel power MOSFETs offer very low recovery charge (Qrr), recovery time (trr), and combined with low RDS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
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IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1

MOSFET MOSFET_(75V,120V(
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

MOSFET MOSFET_(75V,120V(
STW45N60DM6

Mfr.#: STW45N60DM6

OMO.#: OMO-STW45N60DM6

MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages
STP45N60DM6

Mfr.#: STP45N60DM6

OMO.#: OMO-STP45N60DM6

MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
STP45N60DM6

Mfr.#: STP45N60DM6

OMO.#: OMO-STP45N60DM6-STMICROELECTRONICS

Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220AB Tube
STW45N60DM6

Mfr.#: STW45N60DM6

OMO.#: OMO-STW45N60DM6-STMICROELECTRONICS

PTD HIGH VOLTAGE (Alt: STW45N60DM6)
BA4580YFVM-MGTR

Mfr.#: BA4580YFVM-MGTR

OMO.#: OMO-BA4580YFVM-MGTR-ROHM-SEMI

LOW NOISE GRAND SENSE OPERATIONA
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
可用性
庫存:
Available
訂購:
3500
輸入數量:
STB47N60DM6AG的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$6.13
US$6.13
10
US$5.54
US$55.40
25
US$5.29
US$132.25
100
US$4.59
US$459.00
250
US$4.38
US$1 095.00
500
US$3.99
US$1 995.00
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