HGTG20N60B3D

Mfr. #:: HGTG20N60B3D
製造商:: ON Semiconductor
描述:: IGBT 600V 40A 165W TO247
生命週期:: 製造商新產品
數據表:: HGTG20N60B3D 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 仙童半導體

產品分類: IGBT - 單

系列: -

打包: 管子

部分別名: HGTG20N60B3D_NL

單位重量: 0.225401 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247

配置: 單身的

最大功率: 165W

反向恢復時間trr: 55ns

電流收集器 Ic-Max: 40A

電壓收集器發射極擊穿最大值: 600V

IGBT型: -

電流收集器脈衝Icm: 160A

Vce-on-Max-Vge-Ic: 2V @ 15V, 20A

開關能源: 475μJ (on), 1.05mJ (off)

柵極電荷: 80nC

Td-on-off-25°C: -

測試條件: -

鈀功耗: 165 W

最高工作溫度: + 150 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 600 V

集電極-發射極-飽和-電壓: 1.8 V

25-C 時的連續集電極電流: 20 A

柵極-發射極-漏電流: +/- 100 nA

最大柵極發射極電壓: +/- 20 V

連續集電極電流 Ic-Max: 40 A

Tags: HGTG20N60B3D, HGTG20N60B, HGTG20N6, HGTG20, HGTG2, HGTG, HGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG20N60B3D 描述

***ical: Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Japan: Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247

***inecomponents.com: 600V,40A, UFS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST

***eco: @PWR IGBT UFS 20A 600V W/DIODE TF<200NS N-CH TO-247<AZ

***ser: IGBTs 600V, IGBT UFS N-Channel

***i-Key: IGBT N-CH UFS 600V 20A TO-247

***ark: Ptpigbt To247 40A 600V Rohs Compliant: Yes

*** Source Electronics: IGBT 600V 40A 165W TO247

***trelec: IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 175 ns Power dissipation: 165 W

***Semiconductor: 600V, PT IGBT

***nell: IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:40A; Voltage, Vce Sat Max:2V; Power Dissipation:165W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:160A; Device Marking:HGTG20N60B3D; No. of Pins:3; Pin Configuration:With flywheel diode; Power, Pd:165W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:200ns; Time, Rise:20ns; Transistors, No. of:1

***rchild Semiconductor: The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:HGTG20N60B3D; Fall Time tf:200ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Configuration:With flywheel diode; Power Dissipation Max:165W; Power Dissipation Pd:165W; Power Dissipation Pd:165W; Pulsed Current Icm:160A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

型號	製造商	描述	庫存	價格
HGTG20N60B3D DISTI # V99:2348_06359331	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	440	500:$2.6509 250:$2.9459 100:$3.2730 50:$3.6370 25:$4.0410 10:$4.4900 1:$5.7904
HGTG20N60B3D DISTI # V36:1790_06359331	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	0	500:$2.4720 250:$2.9360 100:$2.9770 10:$4.1960 1:$4.8360
HGTG20N60B3D DISTI # HGTG20N60B3DFS-ND	ON Semiconductor	IGBT 600V 40A 165W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	1268In Stock	1350:$2.9537 900:$3.5022 450:$3.9031 10:$5.0210 1:$5.5900
HGTG20N60B3D DISTI # 32871385	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	4438	300:$2.1355 150:$2.1895 90:$2.2176 60:$2.2464 30:$2.2611
HGTG20N60B3D DISTI # 26717730	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	2700	1800:$2.5879 900:$2.6588 450:$2.9860
HGTG20N60B3D DISTI # 32653074	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	440	500:$2.6509 250:$2.9459 100:$3.2730 50:$3.6370 25:$4.0410 10:$4.4900 3:$5.2640
HGTG20N60B3D DISTI # HGTG20N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60B3D) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 4	300:$2.1570 150:$2.2117 90:$2.2400 60:$2.2691 30:$2.2839
HGTG20N60B3D DISTI # HGTG20N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60B3D) RoHS: Compliant Min Qty: 450	Asia - 0	22500:$2.8643 11250:$2.9120 4500:$3.0124 2250:$3.1200 1350:$3.2356 900:$3.3600 450:$3.4944
HGTG20N60B3D DISTI # 58K8902	ON Semiconductor	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8902) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$4.2600 250:$4.7200 100:$4.9800 50:$5.2200 25:$5.4700 10:$5.7100 1:$6.6800
HGTG20N60B3D DISTI # 58K8902	ON Semiconductor	IGBT, TO-247,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:165W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:-RoHS Compliant: Yes	440	500:$3.8400 250:$4.2500 100:$4.4900 50:$4.7000 25:$4.9300 10:$5.1400 1:$6.0200
HGTG20N60B3D. DISTI # 27AC6330	Fairchild Semiconductor Corporation	PTPIGBT TO247 40A 600V ROHS COMPLIANT: YES	0	300:$2.8000 150:$2.8700 62:$2.9100 32:$2.9400 1:$2.9600
HGTG20N60B3D DISTI # 512-HGTG20N60B3D	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Compliant	809	1:$5.3100 10:$4.5200 100:$3.9100 250:$3.7100 500:$3.3300
HGTG20N60B3D_Q DISTI # 512-HGTG20N60B3D_Q	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Not compliant	0
HGTG20N60B3D	Harris Semiconductor	* FREE SHIPPING ORDERS OVER $100 * TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,40A I(C),TO-247	8	8:$2.6700 3:$3.5600 1:$5.3400
HGTG20N60B3D	Fairchild Semiconductor Corporation		250
HGTG20N60B3D	Fairchild Semiconductor Corporation	INSTOCK	60
HGTG20N60B3D DISTI # HGTG20N60B3D	ON Semiconductor	Transistor: IGBT,600V,20A,165W,TO247-3	99	1:$3.4100 3:$2.9300 10:$2.3600 30:$2.1200
HGTG20N60B3D DISTI # 9846603	ON Semiconductor	IGBT, TO-247 RoHS: Compliant	7093	500:$5.1300 250:$5.7100 100:$6.0100 10:$6.9500 1:$8.1600
HGTG20N60B3D DISTI # 9846603	ON Semiconductor	IGBT, TO-247	9551	500:£2.6400 250:£2.9500 100:£3.1000 10:£3.5900 1:£4.6800
HGTG20N60B3D	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 150

相關產品

圖片	型號	描述
	Mfr.#: HGTG20N60A4D OMO.#: OMO-HGTG20N60A4D	IGBT Transistors 600V
	Mfr.#: HGTG20N60C3D OMO.#: OMO-HGTG20N60C3D	Motor / Motion / Ignition Controllers & Drivers UFS 20A 600V N-Ch
	Mfr.#: HGTG20N60B3 OMO.#: OMO-HGTG20N60B3-ON-SEMICONDUCTOR	IGBT 600V 40A 165W TO247
	Mfr.#: HGTG20N120 OMO.#: OMO-HGTG20N120-1190	全新原裝
	Mfr.#: HGTG20N120CND OMO.#: OMO-HGTG20N120CND-1190	全新原裝
	Mfr.#: HGTG20N120E2 OMO.#: OMO-HGTG20N120E2-1190	Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-247
	Mfr.#: HGTG20N60A4D,20N60A4 OMO.#: OMO-HGTG20N60A4D-20N60A4-1190	全新原裝
	Mfr.#: HGTG20N60C3 OMO.#: OMO-HGTG20N60C3-1190	- Bulk (Alt: HGTG20N60C3)
	Mfr.#: HGTG20N60C3DR OMO.#: OMO-HGTG20N60C3DR-1190	全新原裝
	Mfr.#: HGTG20N60A4 20N60A4 OMO.#: OMO-HGTG20N60A4-20N60A4-1190	全新原裝

可用性

庫存:: Available
訂購:: 4000
輸入數量:

HGTG20N60B3D的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$3.18~~; ~~US$3.18~~

10: ~~US$3.02~~; ~~US$30.21~~

100: ~~US$2.86~~; ~~US$286.20~~

500: ~~US$2.70~~; ~~US$1 351.50~~

1000: ~~US$2.54~~; ~~US$2 544.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

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HGTG20N60B3D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes