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BSC046N10NS3GATMA1

BSC046N10NS3GATMA1
Mfr. #:
BSC046N10NS3GATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 100V 100A TDSON-8
生命週期:
製造商新產品
數據表:
BSC046N10NS3GATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
100 A
Rds On - 漏源電阻：
4 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
63 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
156 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
系列：
OptiMOS 3
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
48 S
秋季時間：
11 ns
產品類別：
MOSFET
上升時間：
14 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
41 ns
典型的開啟延遲時間：
16 ns
第 # 部分別名：
BSC046N10NS3 BSC46N1NS3GXT G SP000907922
Tags
BSC046N10NS3, BSC046N1, BSC046, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 4.6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 100V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ark
MOSFET Transistor, N Channel, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
***ure Electronics
Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ure Electronics
Single N-Channel 75 V 3.6 mOhm 63.4 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop
Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R
***ment14 APAC
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ure Electronics
Single P-Channel 100 V 0.2 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK T/R
***ark
P CH MOSFET, -100V, 19A, SMD-220, FULL REEL
***roFlash
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, P-CH, 100V, 19A, TO-263;
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 100V 19A 8-Pin PQFN EP T/R
***(Formerly Allied Electronics)
MOSFET, 100V,100A, 5.2 mOhm, 34nC, PQFN5x6
***ineon
Benefits: Low RDSon (less than 5.2 mOhms); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg Tested; Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1; FastIRFET | Target Applications: HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***emi
N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ
***r Electronics
Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ
***ark
MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
型號 製造商 描述 庫存 價格
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.4162
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.5954
  • 500:$1.8917
  • 100:$2.3361
  • 10:$2.8490
  • 1:$3.1900
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.5954
  • 500:$1.8917
  • 100:$2.3361
  • 10:$2.8490
  • 1:$3.1900
BSC046N10NS3GATMA1
DISTI # BSC046N10NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.3900
  • 5002:$1.2900
  • 10002:$1.2900
  • 25000:$1.2900
  • 50000:$1.1900
BSC046N10NS3GATMA1
DISTI # 50Y1804		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes0
  • 1:$2.6700
  • 10:$2.2700
  • 25:$2.1700
  • 50:$2.0700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
BSC046N10NS3 G
DISTI # 726-BSC046N10NS3G		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
RoHS: Compliant		100
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
  • 2500:$1.3400
  • 5000:$1.2900
BSC046N10NS3GATMA1
DISTI # 726-BSC046N10NS3GATM		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
RoHS: Compliant		0
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.9700
  • 250:$1.8700
  • 500:$1.6700
  • 1000:$1.4100
  • 2500:$1.3400
  • 5000:$1.2900
BSC046N10NS3GATMA1
DISTI # 2480739		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$4.2300
  • 10:$3.6000
  • 100:$3.1200
  • 250:$2.9700
  • 500:$2.6500
  • 1000:$2.2300
  • 2500:$2.1300
  • 5000:$2.0400
BSC046N10NS3GATMA1
DISTI # 2480739RL		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$4.2300
  • 10:$3.6000
  • 100:$3.1200
  • 250:$2.9700
  • 500:$2.6500
  • 1000:$2.2300
  • 2500:$2.1300
  • 5000:$2.0400
BSC046N10NS3GATMA1
DISTI # 2480739		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:£2.3000
  • 10:£1.7400
  • 100:£1.5000
  • 250:£1.4300
  • 500:£1.2700
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TLV3012AQDCKRQ1

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CC0402KRX7R9BB103

Mfr.#: CC0402KRX7R9BB103

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Mfr.#: 78438357068

OMO.#: OMO-78438357068

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SMF3.3

Mfr.#: SMF3.3

OMO.#: OMO-SMF3-3-1190

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TLV3012AQDCKRQ1

Mfr.#: TLV3012AQDCKRQ1

OMO.#: OMO-TLV3012AQDCKRQ1-TEXAS-INSTRUMENTS

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0805YC475KAT2A

Mfr.#: 0805YC475KAT2A

OMO.#: OMO-0805YC475KAT2A-1105

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7uF 16V 10%
ABS07W-32.768KHZ-D-1-T

Mfr.#: ABS07W-32.768KHZ-D-1-T

OMO.#: OMO-ABS07W-32-768KHZ-D-1-T-ABRACON

 CRYSTAL 32.7680KHZ 3PF SMD
可用性
庫存:
Available
訂購:
1986
輸入數量:
BSC046N10NS3GATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.66
US$2.66
10
US$2.26
US$22.60
100
US$1.96
US$196.00
250
US$1.86
US$465.00
500
US$1.67
US$835.00
1000
US$1.40
US$1 400.00
2500
US$1.33
US$3 325.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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