 | | | |
| PartNumber | BSC040N08NS5ATMA1 | BSC040N10NS5ATMA1 | BSC040N10NS5 |
| Description | MOSFET N-Ch 80V 100A TDSON-8 | MOSFET N-Ch 100V 100A TDSON-8 | MOSFET N-Ch 100V 100A TDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | PG-TDSON-8 | PG-TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 100 V | 100 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 4 mOhms | 4 mOhms | 4 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | 2.2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 43 nC | 58 nC | 58 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 104 W | 139 W | 139 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 45 S | 60 S | 60 S |
| Fall Time | 6 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 9 ns | 9 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 32 ns | 32 ns |
| Typical Turn On Delay Time | 14 ns | 13 ns | 13 ns |
| Part # Aliases | BSC040N08NS5 SP001132452 | BSC040N10NS5 SP001295030 | BSC040N10NS5ATMA1 SP001295030 |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.003527 oz |
| Development Kit | - | EVAL_1K4W_ZVS_FB_CFD7 | EVAL_1K4W_ZVS_FB_CFD7 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC042NE7NS3 G | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | |
| BSC047N08NS3 G | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | ||
| BSC042N03LS G | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3 | ||
| BSC047N08NS3GATMA1 | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | ||
| BSC042NE7NS3GATMA1 | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | ||
| BSC042N03MS G | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M | ||
| BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | ||
| BSC046N10NS3 G | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC046N10NS3GATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC040N08NS5ATMA1 | MOSFET N-Ch 80V 100A TDSON-8 | ||
| BSC040N10NS5ATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC040N10NS5 | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC042N03MSGATMA1 | MOSFET N-CH 30V 93A TDSON-8 | ||
| BSC042N03S G | MOSFET N-CH 30V 95A TDSON-8 | ||
| BSC042NE7NS3GATMA1 | MOSFET N-CH 75V 100A TDSON-8 | ||
| BSC047N08NS3GATMA1 | MOSFET N-CH 80V 100A TDSON-8 | ||
| BSC046N02KSGAUMA1 | MOSFET N-CH 20V 80A TDSON-8 | ||
| BSC042N03LSGATMA1 | MOSFET N-CH 30V 93A TDSON-8 | ||
| BSC042N03ST | MOSFET N-CH 30V 50A TDSON-8 | ||
| BSC046N10NS3GATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC040N10NS5ATMA1 | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC040N08NS5ATMA1 | MOSFET N-CH 80V 100A 8TDSON | ||
Infineon Technologies |
BSC046N02KSGAUMA1 | MOSFET LV POWER MOS | |
| BSC040N08NS5 | 全新原裝 | ||
| BSC040N08NS5 , TDA7449 , | 全新原裝 | ||
| BSC040N10NS5 | MOSFET N-Ch 100V 100A TDSON-8 | ||
| BSC042N03LS | 全新原裝 | ||
| BSC042N03LSG | Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC042N03LSGATMA1 , TDA7 | 全新原裝 | ||
| BSC042N03MS | 全新原裝 | ||
| BSC042N03MS G | Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP | ||
| BSC042N03MSG | 全新原裝 | ||
| BSC042N03MSGATMA1 , TDA8 | 全新原裝 | ||
| BSC042N03S | MOSFET Transistor, N-Channel, LLCC | ||
| BSC042N03SG | MOSFET Transistor, N-Channel, LLCC | ||
| BSC042NE7NS3 | 全新原裝 | ||
| BSC042NE7NS3 G | Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G) | ||
| BSC042NE7NS3G | Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP | ||
| BSC046N02KS | 全新原裝 | ||
| BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | ||
| BSC046N02KSG | 19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC046N10NS | 全新原裝 | ||
| BSC046N10NS3 G | Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) | ||
| BSC046N10NS3G | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSC047N08NS | 全新原裝 | ||
| BSC047N08NS3 | 全新原裝 | ||
| BSC047N08NS3 G | MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1 | ||
| BSC047N08NS3G | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G) | ||
| BSC047N08NS3GS | 全新原裝 | ||
| BSC042N03LS G | IGBT Transistors MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3 |