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IKW75N65EH5XKSA1

IKW75N65EH5XKSA1
Mfr. #:
IKW75N65EH5XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
生命週期:
製造商新產品
數據表:
IKW75N65EH5XKSA1 數據表
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ECAD Model:
更多信息:
IKW75N65EH5XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.65 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
90 A
Pd - 功耗：
395 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
高度：
20.7 mm
長度：
15.87 mm
寬度：
5.31 mm
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IKW75N65EH5 SP001257948
Tags
IKW75N65EH, IKW75N65, IKW75N, IKW7, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***o
    S***o
    KZ

    Order did not come

    2019-02-22
    J***l
    J***l
    CZ

    ok

    2019-03-18
***ical
Trans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 90A 3-Pin TO-247 Tube
***an P&S
650V,90A,IGBT with Anti-Parallel Diode
***i-Key
IGBT TRENCH 650V 90A TO247-3
***ronik
IGBT 650V 75A 1,65V TO247-3
***ark
Igbt, Single, 650V, 90A, To-247; Dc Collector Current:90A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 90A, TO-247; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGOLO, 650V, 90A, TO-247; Corrente di Collettore CC:90A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:395W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型號 製造商 描述 庫存 價格
IKW75N65EH5XKSA1
DISTI # V99:2348_06377026		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube112
  • 100:$4.9460
  • 25:$5.7510
  • 10:$6.0830
  • 1:$7.4591
IKW75N65EH5XKSA1
DISTI # IKW75N65EH5XKSA1-ND		Infineon Technologies AGIGBT TRENCH 650V 90A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		240In Stock
  • 720:$4.6678
  • 240:$5.3605
  • 25:$6.1736
  • 10:$6.4750
  • 1:$7.1700
IKW75N65EH5XKSA1
DISTI # 31933332		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube112
  • 100:$4.9460
  • 25:$5.7510
  • 10:$6.0830
  • 2:$7.4591
IKW75N65EH5XKSA1
DISTI # 33637562		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube13
  • 3:$3.7420
IKW75N65EH5XKSA1
DISTI # IKW75N65EH5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 90A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW75N65EH5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
    IKW75N65EH5XKSA1
    DISTI # 12AC9678    		Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247,DC Collector Current:90A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes721
    • 500:$4.4800
    • 250:$4.9200
    • 100:$5.1500
    • 50:$5.5400
    • 25:$5.9400
    • 10:$6.2200
    • 1:$6.8900
    IKW75N65EH5XKSA1
    DISTI # 726-IKW75N65EH5XKSA1    		Infineon Technologies AGIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
    RoHS: Compliant    		7
    • 1:$6.8200
    • 10:$6.1600
    • 25:$5.8800
    • 100:$5.1000
    • 250:$4.8700
    • 500:$4.4400
    IKW75N65EH5XKSA1
    DISTI # 2709961    		Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247961
    • 500:£3.3500
    • 250:£3.6800
    • 100:£3.8500
    • 10:£4.4400
    • 1:£5.1600
    IKW75N65EH5XKSA1
    DISTI # 2709961    		Infineon Technologies AGIGBT, SINGLE, 650V, 90A, TO-247
    RoHS: Compliant    		961
    • 1200:$6.2200
    • 720:$7.1300
    • 240:$8.1900
    • 10:$9.8900
    • 1:$10.9500
    圖片 型號 描述
    INA240A3QDRQ1

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    		 IGBT Transistors INDUSTRY 14
    IKFW90N60EH3XKSA1

    Mfr.#: IKFW90N60EH3XKSA1

    OMO.#: OMO-IKFW90N60EH3XKSA1

    		 IGBT Transistors High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost
    IKFW75N60ETXKSA1

    Mfr.#: IKFW75N60ETXKSA1

    OMO.#: OMO-IKFW75N60ETXKSA1

    		 IGBT Transistors Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
    IKA10N65ET6XKSA2

    Mfr.#: IKA10N65ET6XKSA2

    OMO.#: OMO-IKA10N65ET6XKSA2

    		 IGBT Transistors Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
    IKW50N65EH5XKSA1

    Mfr.#: IKW50N65EH5XKSA1

    OMO.#: OMO-IKW50N65EH5XKSA1

    		 IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
    FFSH1665A

    Mfr.#: FFSH1665A

    OMO.#: OMO-FFSH1665A

    		 Schottky Diodes & Rectifiers 650V 16A SIC SBD
    IXGH72N60A3

    Mfr.#: IXGH72N60A3

    OMO.#: OMO-IXGH72N60A3

    		 IGBT Transistors 72 Amps 600V 1.35 Rds
    IXGH60N60C3

    Mfr.#: IXGH60N60C3

    OMO.#: OMO-IXGH60N60C3

    		 IGBT Transistors GenX3 600V IGBT
    IKA10N65ET6XKSA2

    Mfr.#: IKA10N65ET6XKSA2

    OMO.#: OMO-IKA10N65ET6XKSA2-INFINEON-TECHNOLOGIES

    		 IGBT 650V 15A TO220-3
    可用性
    庫存:
    461
    訂購:
    2444
    輸入數量:
    IKW75N65EH5XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$6.82
    US$6.82
    10
    US$6.16
    US$61.60
    25
    US$5.88
    US$147.00
    100
    US$5.10
    US$510.00
    250
    US$4.87
    US$1 217.50
    500
    US$4.44
    US$2 220.00
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