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SIHG33N65E-GE3

SIHG33N65E-GE3
Mfr. #:
SIHG33N65E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 650V Vds 30V Vgs TO-247AC
生命週期:
製造商新產品
數據表:
SIHG33N65E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIHG33N65E-GE3 DatasheetSIHG33N65E-GE3 Datasheet (P4-P6)SIHG33N65E-GE3 Datasheet (P7)
ECAD Model:
更多信息:
SIHG33N65E-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247AC-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
31.6 A
Rds On - 漏源電阻：
95 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
114 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
313 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
系列：
英孚
品牌：
威世 / Siliconix
秋季時間：
71 ns
產品類別：
MOSFET
上升時間：
56 ns
出廠包裝數量：
25
子類別：
MOSFET
典型關斷延遲時間：
105 ns
典型的開啟延遲時間：
32 ns
Tags
SIHG33, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
***et
Trans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 650V 32.4A TO-247AC
***ark
Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity:n Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.09Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 32.4A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E-Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited
***nell
MOSFET, CA-N, 650V, 32.4A, TO-247AC-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:32.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.09ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E-Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
型號 製造商 描述 庫存 價格
SIHG33N65E-GE3
DISTI # V36:1790_14664699		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC0
  • 500000:$3.7410
  • 250000:$3.7460
  • 50000:$4.3670
  • 5000:$5.6300
  • 500:$5.8500
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 32.4A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		868In Stock
  • 2500:$3.7456
  • 500:$4.4659
  • 100:$5.1285
  • 25:$5.9064
  • 10:$6.1950
  • 1:$6.8600
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC (Alt: SIHG33N65E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 50
  • 1000:€3.3900
  • 100:€3.4900
  • 500:€3.4900
  • 50:€3.5900
  • 25:€3.9900
  • 10:€4.8900
  • 1:€6.1900
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG33N65E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$3.4900
  • 3000:$3.5900
  • 2000:$3.6900
  • 1000:$3.7900
  • 500:$3.8900
SIHG33N65E-GE3
DISTI # 78-SIHG33N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-247AC
RoHS: Compliant		0
  • 1:$6.8600
  • 10:$6.1700
  • 25:$5.6200
  • 100:$5.0700
  • 250:$4.6600
  • 500:$4.2500
  • 1000:$3.7000
SIHG33N65EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-36
    • 100:£3.8800
    • 50:£4.0900
    • 10:£4.3000
    • 5:£5.2300
    • 1:£5.7400
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-3
    RoHS: Compliant    		6
    • 100:$9.0700
    • 10:$11.0300
    • 1:$12.2500
    圖片 型號 描述
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-247AC
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N60E-GE3

    Mfr.#: SIHG33N60E-GE3

    OMO.#: OMO-SIHG33N60E-GE3-VISHAY

    		 Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3-VISHAY

    		 IGBT Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET
    SIHG33N60E-E3

    Mfr.#: SIHG33N60E-E3

    OMO.#: OMO-SIHG33N60E-E3-VISHAY

    		 MOSFET N-CH 600V 33A TO247AC
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3-VISHAY

    		 MOSFET N-CH 650V 31.6A TO-247AC
    SIHG33N60E

    Mfr.#: SIHG33N60E

    OMO.#: OMO-SIHG33N60E-1190

    		 全新原裝
    SIHG33N60E-G3

    Mfr.#: SIHG33N60E-G3

    OMO.#: OMO-SIHG33N60E-G3-1190

    		 全新原裝
    SIHG33N60E-GE3,SIHG33N60

    Mfr.#: SIHG33N60E-GE3,SIHG33N60

    OMO.#: OMO-SIHG33N60E-GE3-SIHG33N60-1190

    		 全新原裝
    SIHG33N65E-GE3

    Mfr.#: SIHG33N65E-GE3

    OMO.#: OMO-SIHG33N65E-GE3-VISHAY

    		 Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
    可用性
    庫存:
    Available
    訂購:
    4000
    輸入數量:
    SIHG33N65E-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$6.86
    US$6.86
    10
    US$6.17
    US$61.70
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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