SIHG33N60E-GE3

SIHG33N60E-GE3
Mfr. #:
SIHG33N60E-GE3
製造商:
Vishay
描述:
Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
生命週期:
製造商新產品
數據表:
SIHG33N60E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商
威世
產品分類
FET - 單
系列
E
打包
管子
單位重量
1.340411 oz
安裝方式
通孔
商品名
E系列
包裝盒
TO-247-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
278 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
80 ns
上升時間
90 ns
VGS-柵極-源極-電壓
4 V
Id 連續漏極電流
33 A
Vds-漏-源-擊穿電壓
600 V
VGS-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
99 mOhms
晶體管極性
N通道
典型關斷延遲時間
150 ns
典型開啟延遲時間
56 ns
Qg-門電荷
150 nC
正向跨導最小值
11 S
Tags
SIHG33N60E-GE, SIHG33N60E-G, SIHG33N60, SIHG33, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin TO-247AC
***ure Electronics
NO LONGER IN COSTBOOK-POSSIBLE REG-CONTACT ENG. OPS/BDA.
***ment14 APAC
MOSFET, N CH, 600V, 33A, TO-247AC-3
***i-Key
MOSFET N-CH 600V 33A TO-247AC
***
N-CH 600V TO-247
***ark
MOSFET, N CH, 600V, 33A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:278W; MSL:- ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 600V, 33A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.083ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:278W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
型號 製造商 描述 庫存 價格
SIHG33N60E-GE3
DISTI # V99:2348_09219046
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant
234
  • 500:$3.8130
  • 250:$4.4010
  • 100:$4.7110
  • 10:$5.6510
  • 1:$6.3150
SIHG33N60E-GE3
DISTI # SIHG33N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 33A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
172In Stock
  • 100:$5.4120
  • 10:$6.6000
  • 1:$7.3900
SIHG33N60E-GE3
DISTI # 30341183
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant
234
  • 100:$4.7110
  • 10:$5.6510
  • 2:$6.3150
SIHG33N60E-GE3
DISTI # SIHG33N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG33N60E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$3.3900
  • 1000:$3.2900
  • 2000:$3.1900
  • 3000:$3.0900
  • 5000:$2.9900
SIHG33N60E-GE3
DISTI # 68W7053
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin TO-247AC - Product that comes on tape, but is not reeled (Alt: 68W7053)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$8.0800
  • 10:$6.6800
  • 25:$6.2900
  • 50:$5.9000
  • 100:$5.5100
  • 250:$5.3400
SIHG33N60E-GE3
DISTI # 68W7053
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-247AC-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,MSL:- RoHS Compliant: Yes36
  • 1:$8.0800
  • 10:$6.6800
  • 25:$6.2900
  • 50:$5.9000
  • 100:$5.5100
  • 250:$5.3400
SIHG33N60E-GE3
DISTI # 68W7054
Vishay IntertechnologiesMOSFET, N CH, 600V, 33A, TO-247AC-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1:$3.7700
  • 2000:$3.6000
  • 4000:$3.3600
  • 8000:$3.1200
  • 12000:$3.0000
  • 20000:$2.9600
SIHG33N60E-GE3
DISTI # 78-SIHG33N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant
50
  • 1:$6.7300
  • 10:$5.5700
  • 100:$4.5900
  • 250:$4.4500
  • 500:$4.0000
SIHG33N60E-E3
DISTI # 78-SIHG33N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant
0
  • 500:$3.9400
  • 1000:$3.3200
  • 2500:$3.1600
SIHG33N60E-GE3Vishay IntertechnologiesE-Series N-Channel 600 V 278 W 99 mO 150 nC Flange Mount Power Mosfet - TO-247AC
RoHS: Compliant
784Bulk
  • 2:$6.3300
  • 20:$5.7400
  • 100:$4.9400
SIHG33N60E-GE3Vishay Intertechnologies 500
    SIHG33N60EGE3Vishay Siliconix 
    RoHS: Not Compliant
    Europe - 100
      SIHG33N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
      RoHS: Compliant
      Europe - 400
        SIHG33N60E-GE3
        DISTI # 2291550
        Vishay IntertechnologiesMOSFET, N CH, 600V, 33A, TO-247AC
        RoHS: Compliant
        582
        • 1:$10.6500
        • 10:$8.8100
        • 100:$7.2700
        • 250:$7.0500
        • 500:$6.3400
        SIHG33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
        RoHS: Compliant
        Americas - 400
          SIHG33N60E-GE3
          DISTI # 2291550
          Vishay IntertechnologiesMOSFET, N CH, 600V, 33A, TO-247AC
          RoHS: Compliant
          585
          • 1:£6.2700
          • 10:£4.4800
          • 100:£3.7000
          • 250:£3.5800
          • 500:£3.2300
          SIHG33N60E-GE3
          DISTI # C1S803601988195
          Vishay IntertechnologiesMOSFETs
          RoHS: Compliant
          234
          • 100:$4.7110
          • 10:$5.6510
          • 1:$6.3150
          圖片 型號 描述
          SIHG33N60EF-GE3

          Mfr.#: SIHG33N60EF-GE3

          OMO.#: OMO-SIHG33N60EF-GE3

          MOSFET 600V Vds 30V Vgs TO-247AC
          SIHG33N65E-GE3

          Mfr.#: SIHG33N65E-GE3

          OMO.#: OMO-SIHG33N65E-GE3

          MOSFET 650V Vds 30V Vgs TO-247AC
          SIHG33N60E-E3

          Mfr.#: SIHG33N60E-E3

          OMO.#: OMO-SIHG33N60E-E3

          MOSFET 600V Vds 30V Vgs TO-247AC
          SIHG33N60E-GE3

          Mfr.#: SIHG33N60E-GE3

          OMO.#: OMO-SIHG33N60E-GE3

          MOSFET 600V Vds 30V Vgs TO-247AC
          SIHG33N60E-GE3

          Mfr.#: SIHG33N60E-GE3

          OMO.#: OMO-SIHG33N60E-GE3-VISHAY

          Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
          SIHG33N60E-E3

          Mfr.#: SIHG33N60E-E3

          OMO.#: OMO-SIHG33N60E-E3-VISHAY

          MOSFET N-CH 600V 33A TO247AC
          SIHG33N60E

          Mfr.#: SIHG33N60E

          OMO.#: OMO-SIHG33N60E-1190

          全新原裝
          SIHG33N60E-G3

          Mfr.#: SIHG33N60E-G3

          OMO.#: OMO-SIHG33N60E-G3-1190

          全新原裝
          SIHG33N60E-GE3,G33N60E,

          Mfr.#: SIHG33N60E-GE3,G33N60E,

          OMO.#: OMO-SIHG33N60E-GE3-G33N60E--1190

          全新原裝
          SIHG33N60E-GE3,SIHG33N60

          Mfr.#: SIHG33N60E-GE3,SIHG33N60

          OMO.#: OMO-SIHG33N60E-GE3-SIHG33N60-1190

          全新原裝
          可用性
          庫存:
          Available
          訂購:
          4000
          輸入數量:
          SIHG33N60E-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格(美元)
          數量
          單價
          小計金額
          1
          US$4.24
          US$4.24
          10
          US$4.03
          US$40.32
          100
          US$3.82
          US$381.99
          500
          US$3.61
          US$1 803.85
          1000
          US$3.40
          US$3 395.50
          由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
          從...開始
          Top