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IPD80R360P7ATMA1

IPD80R360P7ATMA1
Mfr. #:
IPD80R360P7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET
生命週期:
製造商新產品
數據表:
IPD80R360P7ATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPD80R360P7ATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
DPAK-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
13 A
Rds On - 漏源電阻：
310 mOhms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
30 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
84 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
系列：
CoolMOS P7
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
6 ns
產品類別：
MOSFET
上升時間：
6 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
40 ns
典型的開啟延遲時間：
10 ns
第 # 部分別名：
IPD80R360P7 SP001633516
Tags
IPD80R3, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 360 mOhm 30 nC CoolMOS™ Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 800V 13A TO252-3
***ronik
N-CH 800V 13A 360mOhm TO252-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 13A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 13A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:84W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 13A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.31ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:84W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
型號 製造商 描述 庫存 價格
IPD80R360P7ATMA1
DISTI # V36:1790_18205138		Infineon Technologies AG800V CoolMOS P7 Power Transistor0
  • 2500000:$0.9300
  • 1250000:$0.9312
  • 250000:$0.9905
  • 25000:$1.0750
  • 2500:$1.0880
IPD80R360P7ATMA1
DISTI # V72:2272_18205138		Infineon Technologies AG800V CoolMOS P7 Power Transistor0
    IPD80R360P7ATMA1
    DISTI # IPD80R360P7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 800V 13A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1362In Stock
    • 1000:$1.2033
    • 500:$1.4522
    • 100:$1.7676
    • 10:$2.1990
    • 1:$2.4500
    IPD80R360P7ATMA1
    DISTI # IPD80R360P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 800V 13A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1362In Stock
    • 1000:$1.2033
    • 500:$1.4522
    • 100:$1.7676
    • 10:$2.1990
    • 1:$2.4500
    IPD80R360P7ATMA1
    DISTI # IPD80R360P7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 800V 13A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.0474
    • 2500:$1.0877
    IPD80R360P7ATMA1
    DISTI # IPD80R360P7ATMA1    		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD80R360P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.9739
    • 15000:$0.9919
    • 10000:$1.0269
    • 5000:$1.0649
    • 2500:$1.1049
    IPD80R360P7ATMA1
    DISTI # SP001633516    		Infineon Technologies AGLOW POWER_NEW (Alt: SP001633516)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 25000:€0.8509
    • 15000:€0.9119
    • 10000:€0.9819
    • 5000:€1.0639
    • 2500:€1.2769
    IPD80R360P7ATMA1
    DISTI # 24AC9045    		Infineon Technologies AGMOSFET, N-CH, 800V, 13A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.31ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
    • 1000:$1.2800
    • 500:$1.5000
    • 250:$1.6000
    • 100:$1.6900
    • 50:$1.8200
    • 25:$1.9300
    • 10:$2.0600
    • 1:$2.3900
    IPD80R360P7ATMA1
    DISTI # 726-IPD80R360P7ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		0
    • 1:$2.2500
    • 10:$1.9100
    • 100:$1.5300
    • 500:$1.3400
    • 1000:$1.1100
    • 2500:$1.0300
    • 5000:$0.9980
    IPD80R360P7ATMA1
    DISTI # 2771322    		Infineon Technologies AGMOSFET, N-CH, 800V, 13A, TO-2520
    • 500:£1.0300
    • 250:£1.1100
    • 100:£1.1800
    • 10:£1.4800
    • 1:£1.9600
    IPD80R360P7ATMA1
    DISTI # 2771322    		Infineon Technologies AGMOSFET, N-CH, 800V, 13A, TO-252
    RoHS: Compliant    		0
    • 1000:$1.8200
    • 500:$2.1900
    • 100:$2.6700
    • 10:$3.3200
    • 1:$3.6900
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    OMO.#: OMO-MLG0402Q3N9ST000-TDK

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    OMO.#: OMO-NRF52840-QIAA-R-NORDIC-SEMICONDUCTOR

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    可用性
    庫存:
    Available
    訂購:
    2000
    輸入數量:
    IPD80R360P7ATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$2.25
    US$2.25
    10
    US$1.91
    US$19.10
    100
    US$1.53
    US$153.00
    500
    US$1.34
    US$670.00
    1000
    US$1.11
    US$1 110.00
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