 | | |
| PartNumber | IPD80R3K3P7ATMA1 | IPD80R360P7ATMA1 |
| Description | MOSFET | MOSFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | DPAK-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V |
| Id Continuous Drain Current | 1.9 A | 13 A |
| Rds On Drain Source Resistance | 2.8 Ohms | 310 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 5.8 nC | 30 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 18 W | 84 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Series | CoolMOS P7 | CoolMOS P7 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 40 ns | 6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | 6 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 40 ns |
| Typical Turn On Delay Time | 12 ns | 10 ns |
| Part # Aliases | IPD80R3K3P7 SP001636440 | IPD80R360P7 SP001633516 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD80R3K3P7ATMA1 | MOSFET | |
| IPD80R360P7ATMA1 | MOSFET | ||
| IPD80R360P7ATMA1 | MOSFET N-CH 800V 13A TO252-3 | ||
| IPD80R3K3P7ATMA1 | MOSFET N-CH 800V 1.9A TO252-3 | ||
| IPD80R360P7 | 全新原裝 |