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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPP16CN10NGXKSA1 DISTI # 26901332 | Infineon Technologies AG | Trans MOSFET N-CH 100V 53A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 987 |
|
| IPP16CN10NGXKSA1 DISTI # 26758269 | Infineon Technologies AG | Trans MOSFET N-CH 100V 53A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 124 |
|
| IPP16CN10NGXKSA1 DISTI # IPP16CN10NGXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 53A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube | 172In Stock |
|
| IPP16CN10NGHKSA1 DISTI # IPP16CN10NGHKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V TO-220 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call |
|
| IPP16CN10NGXKSA1 DISTI # C1S322000277726 | Infineon Technologies AG | Trans MOSFET N-CH 100V 53A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 1000 |
|
| IPP16CN10NGXKSA1 DISTI # V36:1790_06383658 | Infineon Technologies AG | Trans MOSFET N-CH 100V 53A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 124 |
|
| IPP16CN10N G DISTI # SP000680880 | Infineon Technologies AG | Trans MOSFET N-CH 100V 53A 3-Pin TO-220 Tube (Alt: SP000680880) RoHS: Compliant Min Qty: 1 Container: Tube | Europe - 0 |
|
| IPP16CN10NGHKSA1 DISTI # IPP16CN10NGHKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP16CN10NGHKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| IPP16CN10NGXKSA1 DISTI # IPP16CN10NGXKSA1 | Infineon Technologies AG | MV POWER MOS - Rail/Tube (Alt: IPP16CN10NGXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| IPP16CN10NGHKSA1 DISTI # SP000096469 | Infineon Technologies AG | Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) TO-220 (Alt: SP000096469) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPP16CN10NG | Infineon Technologies AG | Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1369 |
|
| IPP16CN10NGXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1800 |
|
| IPP16CN10N G DISTI # 726-IPP16CN10NG | Infineon Technologies AG | MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 RoHS: Compliant | 0 | |
| IPP16CN10NGHKSA1 DISTI # N/A | Infineon Technologies AG | MOSFET MV POWER MOS | 0 | |
| IPP16CN10NGXKSA1 DISTI # 726-IPP16CN10NGXKSA1 | Infineon Technologies AG | MOSFET N-Ch 100V 53A TO220-3 RoHS: Compliant | 2948 |
|
| IPP16CN10NG | Infineon Technologies AG | 2 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IPP16CN10NGHKSA1 |
MOSFET N-CH 100V TO-220 |
|
Mfr.#: IPP16CN10NG OMO.#: OMO-IPP16CN10NG-1190 |
Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: IPP16CNE8N G |
MOSFET N-CH 85V 53A TO-220 |
|
|
Mfr.#: IPP16CN10LG OMO.#: OMO-IPP16CN10LG-1190 |
全新原裝 |
|
|
Mfr.#: IPP16CN10N OMO.#: OMO-IPP16CN10N-1190 |
全新原裝 |
|
|
Mfr.#: IPP16CN10NG HF OMO.#: OMO-IPP16CN10NG-HF-1190 |
全新原裝 |
|
|
Mfr.#: IPP16CN10NG,16CN10N OMO.#: OMO-IPP16CN10NG-16CN10N-1190 |
全新原裝 |
|
|
Mfr.#: IPP16CN10NGHKSA1 , 2SD87 |
全新原裝 |
|
|
Mfr.#: IPP16CNE8N OMO.#: OMO-IPP16CNE8N-1190 |
全新原裝 |
|
|
Mfr.#: IPP16CN10N G OMO.#: OMO-IPP16CN10N-G-128 |
MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 |
