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BSC060N10NS3 G

BSC060N10NS3 G
Mfr. #:
BSC060N10NS3 G
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
生命週期:
製造商新產品
數據表:
BSC060N10NS3 G 數據表
交貨:
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ECAD Model:
更多信息:
BSC060N10NS3 G 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
90 A
Rds On - 漏源電阻：
5.3 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
68 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
系列：
OptiMOS 3
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
43 S
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
16 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
45 ns
典型的開啟延遲時間：
20 ns
第 # 部分別名：
BSC060N10NS3GATMA1 BSC6N1NS3GXT SP000446584
單位重量：
0.003527 oz
Tags
BSC060N10NS3G, BSC060N10NS3, BSC060N, BSC060, BSC06, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
BSC060N10NS3GATMA1
DISTI # BSC060N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.3425
BSC060N10NS3GATMA1
DISTI # BSC060N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.5423
  • 500:$1.8614
  • 100:$2.3932
  • 10:$2.9780
  • 1:$3.3000
BSC060N10NS3GATMA1
DISTI # BSC060N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.5423
  • 500:$1.8614
  • 100:$2.3932
  • 10:$2.9780
  • 1:$3.3000
BSC060N10NS3G
DISTI # BSC060N10NS3 G		Infineon Technologies AGTrans MOSFET N-CH 100V 14.9A 8-Pin TDSON T/R (Alt: BSC060N10NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC060N10NS3GXT
    DISTI # BSC060N10NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 14.9A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC060N10NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$1.0299
    • 10000:$1.0279
    • 20000:$1.0249
    • 30000:$1.0219
    • 50000:$1.0199
    BSC060N10NS3GATMA1/SAMPLE
    DISTI # BSC060N10NS3GATMA1/SAMPLE    		Infineon Technologies AGTrans MOSFET N-CH 100V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC060N10NS3GATMA1/SAMPLE)
    RoHS: Compliant
    Container: Reel    		Americas - 0
      BSC060N10NS3GATMA1
      DISTI # 79X1333      		Infineon Technologies AGMOSFET, N-CH, 100V, 90A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes3172
      • 1:$2.7700
      • 10:$2.3500
      • 25:$2.1900
      • 50:$2.0400
      • 100:$1.8800
      • 250:$1.7700
      • 500:$1.6500
      • 1000:$1.3700
      BSC060N10NS3 G
      DISTI # 726-BSC060N10NS3G      		Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
      RoHS: Compliant      		107
      • 1:$2.7700
      • 10:$2.3500
      • 100:$1.8800
      • 500:$1.6500
      • 1000:$1.3700
      BSC060N10NS3GATMA1
      DISTI # 726-BSC060N10NS3GATM      		Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
      RoHS: Compliant      		0
      • 1:$2.7700
      • 10:$2.3500
      • 100:$1.8800
      • 500:$1.6500
      • 1000:$1.3700
      BSC060N10NS3GATMA1
      DISTI # 7545276      		Infineon Technologies AGMOSFET N-CHANNEL 100V 14.9A TDSON8, EA217
      • 1:£2.0000
      • 50:£1.1800
      • 250:£0.8900
      • 1250:£0.8200
      • 2500:£0.7700
      BSC060N10NS3GATMA1
      DISTI # 7545276P      		Infineon Technologies AGMOSFET N-CHANNEL 100V 14.9A TDSON8, RL4546
      • 50:£1.1800
      • 250:£0.8900
      • 1250:£0.8200
      • 2500:£0.7700
      BSC060N10NS3GInfineon Technologies AG14.9 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET222
      • 200:$4.4880
      • 47:$5.0320
      • 1:$8.1600
      BSC060N10NS3GInfineon Technologies AG 219
        BSC060N10NS3G  1582
          BSC060N10NS3GATMA1
          DISTI # 2432708          		Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
          RoHS: Compliant          		3172
          • 1:$4.3800
          • 10:$3.7200
          • 100:$2.9800
          • 500:$2.6200
          • 1000:$2.1700
          • 2500:$2.0100
          • 5000:$1.9500
          BSC060N10NS3GATMA1
          DISTI # 2432708RL          		Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
          RoHS: Compliant          		0
          • 1:$4.3800
          • 10:$3.7200
          • 100:$2.9800
          • 500:$2.6200
          • 1000:$2.1700
          • 2500:$2.0100
          • 5000:$1.9500
          BSC060N10NS3GATMA1
          DISTI # 2432708          		Infineon Technologies AGMOSFET, N CH, 100V, 90A, TDSON-8
          RoHS: Compliant          		2003
          • 1:£1.3700
          • 10:£1.1300
          • 100:£0.8810
          • 250:£0.8630
          • 500:£0.8460
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          可用性
          庫存:
          21
          訂購:
          2004
          輸入數量:
          BSC060N10NS3 G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格（美元）
          數量
          單價
          小計金額
          1
          US$2.76
          US$2.76
          10
          US$2.34
          US$23.40
          100
          US$1.87
          US$187.00
          500
          US$1.64
          US$820.00
          1000
          US$1.36
          US$1 360.00
          由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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