 |  | | |
| PartNumber | BSC060N10NS3 G | BSC060N10NS | BSC060N10NS3 |
| Description | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 5.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 68 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | Single Quad Drain Triple Source |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 43 S | - | - |
| Fall Time | 12 ns | 12 ns | 12 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | 16 ns | 16 ns |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | 45 ns | 45 ns |
| Typical Turn On Delay Time | 20 ns | 20 ns | 20 ns |
| Part # Aliases | BSC060N10NS3GATMA1 BSC6N1NS3GXT SP000446584 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | BSC060N10NS3GATMA1 BSC060N10NS3GXT SP000446584 | BSC060N10NS3GATMA1 BSC060N10NS3GXT SP000446584 |
| Package Case | - | TDSON-8 | TDSON-8 |
| Pd Power Dissipation | - | 125 W | 125 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 90 A | 90 A |
| Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
| Rds On Drain Source Resistance | - | 6 mOhms | 6 mOhms |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC060N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | |
| BSC060N10NS3GATMA1 | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC060N10NS3GATMA1 | MOSFET N-CH 100V 90A TDSON-8 | ||
| BSC060N10NS | 全新原裝 | ||
| BSC060N10NS3 | 全新原裝 | ||
| BSC060N10NS3 G | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | ||
| BSC060N10NS3G | Trans MOSFET N-CH 100V 14.9A 8-Pin TDSON T/R (Alt: BSC060N10NS3 G) | ||
| BSC060N10NS3GATMA1 , TDA | 全新原裝 |