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T1G4004532-FS

T1G4004532-FS
Mfr. #:
T1G4004532-FS
製造商:
Qorvo
描述:
RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
生命週期:
製造商新產品
數據表:
T1G4004532-FS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
T1G4004532-FS 更多信息
產品屬性
屬性值
製造商：
科沃
產品分類：
射頻 JFET 晶體管
RoHS：
Y
技術：
氮化鎵碳化矽
Vds - 漏源擊穿電壓：
32 V
Vgs - 柵源擊穿電壓：
100 V
Pd - 功耗：
45 W
安裝方式：
貼片/貼片
打包：
托盤
配置：
單身的
高度：
4.064 mm
長度：
9.652 mm
寬度：
5.842 mm
品牌：
科沃
柵源截止電壓：
- 2.9 V
濕氣敏感：
是的
產品類別：
射頻 JFET 晶體管
出廠包裝數量：
50
子類別：
晶體管
第 # 部分別名：
1092444
Tags
T1G4004, T1G400, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN
T1G4004532 GaN RF Power Transistors
Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
T1G4004532-FS
DISTI # 772-T1G4004532-FS		QorvoRF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
RoHS: Compliant		37
  • 1:$220.0000
  • 25:$198.5500
T1G4004532-FS-EVB1
DISTI # 772-T1G4004532-FS-EB		QorvoRF Development Tools DC-35.GHz GaN Eval Board
RoHS: Compliant		2
  • 1:$875.0000
圖片 型號 描述
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL-318

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS-318

 RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G40020036-FL

Mfr.#: T1G40020036-FL

OMO.#: OMO-T1G40020036-FL-1190

 全新原裝
T1G4003532

Mfr.#: T1G4003532

OMO.#: OMO-T1G4003532-1190

 全新原裝
T1G4003532-FL

Mfr.#: T1G4003532-FL

OMO.#: OMO-T1G4003532-FL-1152

 RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4003532-FS

Mfr.#: T1G4003532-FS

OMO.#: OMO-T1G4003532-FS-1152

 RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4004532-FS-EVB1

Mfr.#: T1G4004532-FS-EVB1

OMO.#: OMO-T1G4004532-FS-EVB1-1152

 RF Development Tools DC-35.GHz GaN Eval Board
T1G4005528-FS-EVB1

Mfr.#: T1G4005528-FS-EVB1

OMO.#: OMO-T1G4005528-FS-EVB1-1152

 RF Development Tools DC-3.5GHz 28Volt Eval Board
可用性
庫存:
37
訂購:
2020
輸入數量:
T1G4004532-FS的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$220.00
US$220.00
25
US$198.55
US$4 963.75
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