MTB30P06VT4G

Mfr. #:: MTB30P06VT4G
製造商:: ON Semiconductor
描述:: MOSFET PFET D2PAK 60V 30A 80mOhm
生命週期:: 製造商新產品
數據表:: MTB30P06VT4G 數據表
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HTML Datasheet:: MTB30P06VT4G Datasheet MTB30P06VT4G Datasheet (P4-P6)MTB30P06VT4G Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263-3

通道數：: 1 Channel

晶體管極性：: P-通道

Vds - 漏源擊穿電壓：: 60 V

Id - 連續漏極電流：: 30 A

Rds On - 漏源電阻：: 80 mOhms

Vgs - 柵源電壓：: 15 V

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 3 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 4.83 mm

長度：: 10.29 mm

系列：: MTB30P06V

晶體管類型：: 1 P-Channel

類型：: MOSFET

寬度：: 9.65 mm

品牌：: 安森美半導體

正向跨導 - 最小值：: 7.9 S

秋季時間：: 52.4 ns

產品類別：: MOSFET

上升時間：: 25.9 ns

出廠包裝數量：: 800

子類別：: MOSFET

典型關斷延遲時間：: 98 ns

典型的開啟延遲時間：: 14.7 ns

單位重量：: 0.139332 oz

Tags: MTB30P06V, MTB30P, MTB30, MTB3, MTB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MTB30P06VT4G 描述

***ied Electronics & Automation: MTB30P06VT4G P-channel MOSFET Transistor; 30 A; 60 V; 3-Pin D2PAK

***emi: Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK

***ical: Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R

***ark: P Channel Mosfet, -60V, 30A, D2-Pak; Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.067Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***th Star Micro: This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage high speed switching applications in power supplies converters and power motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Market price

型號	製造商	描述	庫存	價格
MTB30P06VT4G DISTI # MTB30P06VT4GOSTR-ND	ON Semiconductor	MOSFET P-CH 60V 30A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Limited Supply - Call
MTB30P06VT4G DISTI # MTB30P06VT4GOSCT-ND	ON Semiconductor	MOSFET P-CH 60V 30A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
MTB30P06VT4G DISTI # MTB30P06VT4GOSDKR-ND	ON Semiconductor	MOSFET P-CH 60V 30A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
MTB30P06VT4G DISTI # 09R9556	ON Semiconductor	P CHANNEL MOSFET, -60V, 30A, D2-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-30A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):67mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.6V , RoHS Compliant: Yes	0
MTB30P06VT4G DISTI # 70466787	ON Semiconductor	MTB30P06VT4G P-channel MOSFET Transistor,30 A,60 V,3-Pin D2PAK RoHS: Compliant	0	10:$2.0000 100:$1.9000 250:$1.8100 500:$1.7200
MTB30P06VT4G	ON Semiconductor	RoHS: Not Compliant	16130	1000:$1.1600 500:$1.2200 100:$1.2700 25:$1.3300 1:$1.4300
MTB30P06VT4G DISTI # 863-MTB30P06VT4G	ON Semiconductor	MOSFET PFET D2PAK 60V 30A 80mOhm RoHS: Compliant	0
MTB30P06VT4 DISTI # 863-MTB30P06VT4	ON Semiconductor	MOSFET 60V 30A P-Channel RoHS: Not compliant	0
MTB30P06VT4G	ON Semiconductor	RoHS: Compliant	Europe - 4000

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