 | | |
| PartNumber | MTB30P06VT4 | MTB30P06VT4G |
| Description | MOSFET 60V 30A P-Channel | MOSFET PFET D2PAK 60V 30A 80mOhm |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | N | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 30 A | 30 A |
| Rds On Drain Source Resistance | 80 mOhms | 80 mOhms |
| Vgs Gate Source Voltage | 15 V | 15 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 3 W | 3 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 4.83 mm | 4.83 mm |
| Length | 10.29 mm | 10.29 mm |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | MOSFET | MOSFET |
| Width | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 7.9 S | 7.9 S |
| Fall Time | 52.4 ns | 52.4 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25.9 ns | 25.9 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 98 ns | 98 ns |
| Typical Turn On Delay Time | 14.7 ns | 14.7 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Series | - | MTB30P06V |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
MTB30P06VT4 | MOSFET 60V 30A P-Channel | |
| MTB30P06VT4G | MOSFET PFET D2PAK 60V 30A 80mOhm | ||
| MTB30P06VT4 | MOSFET P-CH 60V 30A D2PAK | ||
| MTB30P06VT4G | MOSFET P-CH 60V 30A D2PAK | ||
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| MTB30N06VLT4 | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
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| MTB30P06V | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
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