SIZ710DT-T1-GE3

Mfr. #:: SIZ710DT-T1-GE3
製造商:: Vishay
描述:: MOSFET 2N-CH 20V 16A POWERPAIR
生命週期:: 製造商新產品
數據表:: SIZ710DT-T1-GE3 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: SIZ710DT-T1-GE3 更多信息

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 陣列

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SIZ710DT-GE3

安裝方式: 貼片/貼片

包裝盒: 6-PowerPair

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: 6-PowerPair

配置: 雙重的

FET型: 2 N-Channel (Half Bridge)

最大功率: 27W, 48W

晶體管型: 2 N-Channel

漏源電壓 Vdss: 20V

輸入電容-Ciss-Vds: 820pF @ 10V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 16A, 35A

Rds-On-Max-Id-Vgs: 6.8 mOhm @ 19A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

柵極電荷-Qg-Vgs: 18nC @ 10V

鈀功耗: 27 W 48 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

VGS-柵極-源極-電壓: +/- 20 V

Id 連續漏極電流: 16 A

Vds-漏-源-擊穿電壓: 20 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V to 2.2 V

Rds-On-Drain-Source-Resistance: 5.5 mOhms 2.7 mOhms

晶體管極性: N通道

Qg-門電荷: 11.5 nC 38 nC

正向跨導最小值: 45 S 85 S

Tags: SIZ710DT-T, SIZ71, SIZ7, SiZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIZ710DT-T1-GE3 描述

***ure Electronics: Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm

***et Europe: Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R

***ark: MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V

***ment14 APAC: MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W

SIZ710DT-T1-GE3 更多信息

Dual N-Channel TrenchFET® Power MOSFETs: Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

PowerPAIR® Dual-MOSFETs: Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency.

Market price

型號	製造商	描述	庫存	價格
SIZ710DT-T1-GE3 DISTI # V72:2272_09216120	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R RoHS: Compliant	2000	1000:$0.6544 500:$0.7412 250:$0.8087 100:$0.8367 25:$0.9213 10:$1.0236 1:$1.1931
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 16A POWERPAIR RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.6622
SIZ710DT-T1-GE3 DISTI # 30150542	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R RoHS: Compliant	2000	1000:$0.6544 500:$0.7412 250:$0.8087 100:$0.8367 25:$0.9213 12:$1.0236
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.6596 6000:$0.5074 9000:$0.4039 15000:$0.3412 30000:$0.3141 75000:$0.3044 150000:$0.2954
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.2499 6000:€0.8959 12000:€0.7269 18000:€0.6429 30000:€0.6149
SIZ710DT-T1-GE3 DISTI # SIZ710DT-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.6249 6000:$0.6069 12000:$0.5819 18000:$0.5659 30000:$0.5509
SIZ710DT-T1-GE3 DISTI # 83T3536	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.5100 25:$1.2400 50:$1.1000 100:$0.9510 250:$0.8850 500:$0.8180 1000:$0.7190
SIZ710DT-T1-GE3 DISTI # 65T1676	Vishay Intertechnologies	MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes	0	1:$0.6370 3000:$0.6330 6000:$0.6020 12000:$0.5340
SIZ710DT-T1-GE3 DISTI # 781-SIZ710DT-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7 RoHS: Compliant	378	1:$1.5100 10:$1.2400 100:$0.9510 500:$0.8180 1000:$0.7190 3000:$0.7170
SIZ710DT-T1-GE3 DISTI # C1S803601344629	Vishay Intertechnologies	MOSFETs	2000	250:$0.8087 100:$0.8367 25:$0.9213 10:$1.0236
SIZ710DT-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7	Americas -
SIZ710DT-T1-GE3 DISTI # 2129099	Vishay Intertechnologies	MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA RoHS: Compliant	0	3000:£0.6370

相關產品

圖片	型號	描述
	Mfr.#: SIZ710DT-T1-GE3 OMO.#: OMO-SIZ710DT-T1-GE3	MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
	Mfr.#: SIZ710DT-T1 OMO.#: OMO-SIZ710DT-T1-1190	全新原裝
	Mfr.#: SIZ710DT OMO.#: OMO-SIZ710DT-1190	全新原裝
	Mfr.#: SIZ710DT-T1-GE OMO.#: OMO-SIZ710DT-T1-GE-1190	全新原裝
	Mfr.#: SIZ710DT-T1-GE3 OMO.#: OMO-SIZ710DT-T1-GE3-VISHAY	MOSFET 2N-CH 20V 16A POWERPAIR

可用性

庫存:: Available
訂購:: 4000
輸入數量:

SIZ710DT-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.81~~; ~~US$0.81~~

10: ~~US$0.77~~; ~~US$7.69~~

100: ~~US$0.73~~; ~~US$72.90~~

500: ~~US$0.69~~; ~~US$344.25~~

1000: ~~US$0.65~~; ~~US$648.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

SIZ710DT-T 3
SIZ71 4
SIZ7 19
SiZ 92

SIZ710DT-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes