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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
BSC046N10NS3 G DISTI # BSC046N10NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
BSC046N10NS3 G DISTI # SP000907922 | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: SP000907922) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSC046N10NS3GATMA1 DISTI # SP000907922 | Infineon Technologies AG | Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP (Alt: SP000907922) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
BSC046N10NS3GATMA1 DISTI # 50Y1804 | Infineon Technologies AG | MOSFET Transistor, N Channel, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V , RoHS Compliant: Yes | 0 |
|
BSC046N10NS3 G DISTI # 726-BSC046N10NS3G | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 100 |
|
BSC046N10NS3GATMA1 DISTI # 726-BSC046N10NS3GATM | Infineon Technologies AG | MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant | 0 |
|
BSC046N10NS3G | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2 |
|
BSC046N10NS3 G DISTI # TMOSP10892 | Infineon Technologies AG | N-CH 100V 100A 4,6mOhm TDSON-8 RoHS: Compliant | Stock DE - 0Stock US - 0 |
|
BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC046N10NS3GATMA1 DISTI # 2480739 | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC046N10NS3GATMA1 DISTI # 2480739RL | Infineon Technologies AG | MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: BSC046N02KS G OMO.#: OMO-BSC046N02KS-G |
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | |
Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G |
MOSFET N-Ch 100V 100A TDSON-8 | |
Mfr.#: BSC046N02KSGAUMA1 OMO.#: OMO-BSC046N02KSGAUMA1 |
MOSFET LV POWER MOS | |
Mfr.#: BSC046N02KS OMO.#: OMO-BSC046N02KS-1190 |
全新原裝 | |
Mfr.#: BSC046N02KS G OMO.#: OMO-BSC046N02KS-G-1190 |
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | |
Mfr.#: BSC046N02KSG OMO.#: OMO-BSC046N02KSG-1190 |
19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET | |
Mfr.#: BSC046N10NS OMO.#: OMO-BSC046N10NS-1190 |
全新原裝 | |
Mfr.#: BSC046N10NS3 G OMO.#: OMO-BSC046N10NS3-G-1190 |
Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G) | |
Mfr.#: BSC046N10NS3G OMO.#: OMO-BSC046N10NS3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | |
Mfr.#: BSC046N02KSGAUMA1 |
MOSFET N-CH 20V 80A TDSON-8 |