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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BUZ111SE3045 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 | |
| BUZ111SE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 215 |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: BUZ111SLE3045A OMO.#: OMO-BUZ111SLE3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: BUZ111 OMO.#: OMO-BUZ111-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: BUZ111S OMO.#: OMO-BUZ111S-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUZ111SE045A OMO.#: OMO-BUZ111SE045A-1190 |
全新原裝 |
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Mfr.#: BUZ111SE3045 OMO.#: OMO-BUZ111SE3045-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: BUZ111SE3045A OMO.#: OMO-BUZ111SE3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: BUZ111SL OMO.#: OMO-BUZ111SL-1190 |
MOSFET Transistor, N-Channel, TO-220AB |
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Mfr.#: BUZ111SL-E3045 OMO.#: OMO-BUZ111SL-E3045-1190 |
全新原裝 |
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Mfr.#: BUZ111SL-E3045A OMO.#: OMO-BUZ111SL-E3045A-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |