 |  | | |
| PartNumber | BUZ11-NR4941 | BUZ11 | BUZ11. |
| Description | MOSFET N-Channel 50V 33A | TO220 NCH MOS 50V .04R | MOSFET Transistor, N-Channel, TO-220AB |
| Manufacturer | ON Semiconductor | ST | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 75 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | BUZ11 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 130 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 70 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 180 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | BUZ11_NR4941 | - | - |
| Unit Weight | 0.063493 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
BUZ11-NR4941 | MOSFET N-Channel 50V 33A | |
| BUZ111SLE3045A | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| BUZ11 | TO220 NCH MOS 50V .04R | ||
| BUZ11. | MOSFET Transistor, N-Channel, TO-220AB | ||
| BUZ11/A | 全新原裝 | ||
| BUZ110 | 全新原裝 | ||
| BUZ110S | 全新原裝 | ||
| BUZ110SL | 全新原裝 | ||
| BUZ110SLE3045A | 80 A, 55 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | ||
| BUZ111 | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| BUZ111S | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| BUZ111SE045A | 全新原裝 | ||
| BUZ111SE3045 | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| BUZ111SE3045A | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| BUZ111SL | MOSFET Transistor, N-Channel, TO-220AB | ||
| BUZ111SL-E3045 | 全新原裝 | ||
| BUZ111SL-E3045A | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| BUZ112 | 全新原裝 | ||
| BUZ11A | MOSFET N-Ch 50 Volt 26 Amp | ||
| BUZ11A,BUZ11 | 全新原裝 | ||
| BUZ11AF | 全新原裝 | ||
| BUZ11AL | MOSFET Transistor, N-Channel, TO-220AB | ||
| BUZ11FI | 全新原裝 | ||
| BUZ11L | 全新原裝 | ||
| BUZ11R4676 | 全新原裝 | ||
| BUZ11R4941 | 全新原裝 | ||
| BUZ11S2 | 全新原裝 | ||
| BUZ11S2FI | 全新原裝 | ||
| BUZ11_NR4941 | FET 50V 40.0 MOHM TO220 | ||
ON Semiconductor |
BUZ11-NR4941 | MOSFET N-CH 50V 30A TO-220AB | |
| BUZ11_R4941 | MOSFET N-CH 50V 30A TO-220AB |