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IPP60R060P7XKSA1

IPP60R060P7XKSA1
Mfr. #:
IPP60R060P7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPP60R060P7XKSA1 數據表
交貨:
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ECAD Model:
更多信息:
IPP60R060P7XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
48 A
Rds On - 漏源電阻：
49 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
67 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
164 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
管子
系列：
CoolMOS P7
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
4 ns
產品類別：
MOSFET
上升時間：
12 ns
出廠包裝數量：
500
子類別：
MOSFET
典型關斷延遲時間：
79 ns
典型的開啟延遲時間：
23 ns
第 # 部分別名：
IPP60R060P7 SP001658410
單位重量：
0.063493 oz
Tags
IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 60 mOhm 67 nC CoolMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 48A 3-Pin(3+Tab) TO-220 Tube
***i-Key
MOSFET N-CH 600V 48A TO220-3
***ronik
N-CH 600V 48A 49mOhm TO220-3
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 48A, 164W, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 48A, 164W, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:164W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 48A, 164W, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:48A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.049ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:164W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型號 製造商 描述 庫存 價格
IPP60R060P7XKSA1
DISTI # V99:2348_18203759		Infineon Technologies AGHIGH POWER_NEW495
  • 500:$3.8320
  • 250:$3.8860
  • 100:$4.5890
  • 10:$5.2900
  • 1:$6.9685
IPP60R060P7XKSA1
DISTI # V36:1790_18203759		Infineon Technologies AGHIGH POWER_NEW0
  • 500000:$2.9230
  • 250000:$2.9270
  • 50000:$3.3540
  • 5000:$4.1760
  • 500:$4.3170
IPP60R060P7XKSA1
DISTI # IPP60R060P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 48A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2500:$3.3677
  • 500:$4.2032
  • 100:$4.9375
  • 25:$5.6972
  • 10:$6.0260
  • 1:$6.7100
IPP60R060P7XKSA1
DISTI # 33121302		Infineon Technologies AGHIGH POWER_NEW500
  • 500:$5.2812
IPP60R060P7XKSA1
DISTI # 32149286		Infineon Technologies AGHIGH POWER_NEW495
  • 2:$6.9685
IPP60R060P7XKSA1
DISTI # SP001658410		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001658410)
RoHS: Compliant
Min Qty: 1		Europe - 440
  • 1000:€2.5900
  • 500:€2.7900
  • 100:€2.8900
  • 50:€2.9900
  • 25:€3.1900
  • 10:€3.2900
  • 1:€3.5900
IPP60R060P7XKSA1
DISTI # IPP60R060P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPP60R060P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$2.9900
  • 3000:$3.0900
  • 2000:$3.1900
  • 1000:$3.2900
  • 500:$3.3900
IPP60R060P7XKSA1
DISTI # 93AC7132		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, 164W, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes489
  • 500:$4.0400
  • 250:$4.5000
  • 100:$4.7500
  • 50:$4.9900
  • 25:$5.2300
  • 10:$5.4700
  • 1:$6.4400
IPP60R060P7XKSA1
DISTI # 726-IPP60R060P7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		3472
  • 1:$6.3800
  • 10:$5.4200
  • 100:$4.7000
  • 250:$4.4600
  • 500:$4.0000
IPP60R060P7XKSA1Infineon Technologies AGSingle N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - TO-220-3
RoHS: Not Compliant		500Tube
  • 500:$3.2200
IPP60R060P7XKSA1
DISTI # 2986482		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, 164W, TO-220489
  • 100:£4.0100
  • 10:£4.6300
  • 1:£5.9900
IPP60R060P7XKSA1
DISTI # XSFP00000120350		Infineon Technologies AG 
RoHS: Compliant		1000 in Stock0 on Order
  • 1000:$4.2900
  • 500:$4.6000
IPP60R060P7XKSA1
DISTI # 2986482		Infineon Technologies AGMOSFET, N-CH, 600V, 48A, 164W, TO-220
RoHS: Compliant		489
  • 100:$6.5300
  • 10:$7.5400
  • 1:$9.7500
圖片 型號 描述
TLV272IDR

Mfr.#: TLV272IDR

OMO.#: OMO-TLV272IDR

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FCP067N65S3

Mfr.#: FCP067N65S3

OMO.#: OMO-FCP067N65S3

 MOSFET 650V 44A N-Channel SuperFET MOSFET
ES1C

Mfr.#: ES1C

OMO.#: OMO-ES1C

 Rectifiers 1.0a Rectifier UF Recovery
2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002

 MOSFET N-CHANNEL 60V 115mA
08051C104KAT2A

Mfr.#: 08051C104KAT2A

OMO.#: OMO-08051C104KAT2A

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V .1uF X7R 0805 10%TOL
PA2512FKF7W0R005E

Mfr.#: PA2512FKF7W0R005E

OMO.#: OMO-PA2512FKF7W0R005E

 Current Sense Resistors - SMD 5mOhm 2W 1% AEC-Q200
IRM-10-12

Mfr.#: IRM-10-12

OMO.#: OMO-IRM-10-12

 AC/DC Power Modules 12V 0.85A 10.2W 85-264Vin Encap PS
SL32 10015

Mfr.#: SL32 10015

OMO.#: OMO-SL32-10015-AMETHERM

 Inrush Current Limiters 32mm 10ohms 15A INRSH CURR LIMITER
PA2512FKF7W0R005E

Mfr.#: PA2512FKF7W0R005E

OMO.#: OMO-PA2512FKF7W0R005E-YAGEO

 Current Sense Resistors - SMD 5mOhm 2W 1% 100PPM/C
TLV272IDR

Mfr.#: TLV272IDR

OMO.#: OMO-TLV272IDR-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps 2-Ch R-R Op Amp
可用性
庫存:
Available
訂購:
1986
輸入數量:
IPP60R060P7XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$6.38
US$6.38
10
US$5.42
US$54.20
100
US$4.70
US$470.00
250
US$4.46
US$1 115.00
500
US$4.00
US$2 000.00
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