STU80N4F6

Mfr. #:: STU80N4F6
製造商:: STMicroelectronics
描述:: MOSFET N CH 40V 80A IPAK
生命週期:: 製造商新產品
數據表:: STU80N4F6 數據表
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更多信息:: STU80N4F6 更多信息 STU80N4F6 Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: 晶體管 - FET、MOSFET - 單

系列: N 溝道 STripFET

打包: 管子

單位重量: 0.139332 oz

安裝方式: 通孔

商品名: STripFET

包裝盒: IPAK-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 70 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 11.9 ns

上升時間: 7.6 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 80 A

Vds-漏-源-擊穿電壓: 40 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 5.5 mOhms

晶體管極性: N通道

典型關斷延遲時間: 46.1 ns

典型開啟延遲時間: 10.5 ns

Qg-門電荷: 36 nC

通道模式: 增強

Tags: STU8, STU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STU80N4F6 描述

***icroelectronics: N-channel 40 V, 5.8 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package

***r Electronics: Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ment14 APAC: MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

***Yang: 30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET - Bulk

***ser: MOSFETs 30V N-Channel PowerTrench

***r Electronics: Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***i-Key: MOSFET N-CH 30V 90A IPAK

***ser: MOSFETs 30V N-Channel PowerTrench SyncFET

***el Nordic: Contact for details

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS

***ical: Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(3+Tab) IPAK Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50Volts C0G +/-0.50pF

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***nell: MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***icroelectronics: N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

***r Electronics: Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ark: MOSFET, N CH, 30V, 75A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 75A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***ser: MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM

***r Electronics: Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***Yang: NFET DPAK 30V 76A 6MOHM - Rail/Tube

***or: MOSFET N-CH 30V 11.3A/79A IPAK

***th Star Micro: Not recommended for new design. Use NTD4906N

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
STU80N4F6 DISTI # 30615503	STMicroelectronics	Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	50	33:$0.7625
STU80N4F6 DISTI # 497-13657-5-ND	STMicroelectronics	MOSFET N CH 40V 80A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	2377In Stock	525:$1.0841 150:$1.3195 75:$1.5488 10:$1.6420 1:$1.8300
STU80N4F6 DISTI # C1S730200785376	STMicroelectronics	Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	50	50:$0.6030 1:$0.6100
STU80N4F6 DISTI # 89W1526	STMicroelectronics	PTD LOW VOLTAGE	0	5000:$0.7670 2500:$0.7910 1000:$0.9800 500:$1.1000 100:$1.1800 10:$1.4700 1:$1.7300
STU80N4F6 DISTI # 511-STU80N4F6	STMicroelectronics	MOSFET N-Ch 40 V 5.8 mOhm 80 A STripFET(TM) RoHS: Compliant	2887	1:$1.7400 10:$1.4800 100:$1.1800 500:$1.0400 1000:$0.8560 3000:$0.7970 6000:$0.7680 9000:$0.7380

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