 | |  | |
| PartNumber | STU10NM60N | STU10N60M2 | STU10NM65N |
| Description | MOSFET N-channel 600 V Mdmesh 8A | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | MOSFET N-CH 650V 9A IPAK |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-251-3 | TO-251-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 8 A | 7.5 A | - |
| Rds On Drain Source Resistance | 530 mOhms | 560 mOhms | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | Tube | - |
| Series | STU10NM60N | STU10N60M2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Qg Gate Charge | - | 13.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 85 W | - |
| Fall Time | - | 13.2 ns | - |
| Rise Time | - | 8 ns | - |
| Typical Turn Off Delay Time | - | 32.5 ns | - |
| Typical Turn On Delay Time | - | 8.8 ns | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STU13005N | Bipolar Transistors - BJT High Volt NPN Trans 700Vces 400Vceo 3A | |
| STU12N60M2 | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in IPAK package | ||
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| STU10N60M2 | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | ||
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