SCT3105KLGC11

SCT3105KLGC11
Mfr. #:
SCT3105KLGC11
製造商:
Rohm Semiconductor
描述:
MOSFET Nch 1200V 24A SiC TO-247N
生命週期:
製造商新產品
數據表:
SCT3105KLGC11 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SCT3105KLGC11 更多信息
產品屬性
屬性值
製造商:
羅姆半導體
產品分類:
MOSFET
RoHS:
Y
技術:
碳化矽
安裝方式:
通孔
包裝/案例:
TO-247N-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
1200 V
Id - 連續漏極電流:
24 A
Rds On - 漏源電阻:
137 mOhms
Vgs th - 柵源閾值電壓:
2.7 V
Vgs - 柵源電壓:
4 V to 22 V
Qg - 門電荷:
51 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
配置:
單身的
頻道模式:
增強
打包:
管子
系列:
SCT3x
晶體管類型:
1 N-Channel
品牌:
羅姆半導體
正向跨導 - 最小值:
3.4 S
秋季時間:
17 ns
產品類別:
MOSFET
上升時間:
27 ns
出廠包裝數量:
30
子類別:
MOSFET
典型關斷延遲時間:
31 ns
典型的開啟延遲時間:
17 ns
Tags
SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
型號 製造商 描述 庫存 價格
SCT3105KLGC11
DISTI # SCT3105KLGC11-ND
ROHM SemiconductorSCT3105KL IS AN SIC (SILICON CAR
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 450:$12.5240
  • 25:$14.9480
  • 10:$15.5940
  • 1:$16.9700
SCT3105KL
DISTI # SCT3105KLGC11
ROHM Semiconductor- Rail/Tube (Alt: SCT3105KLGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$10.2900
  • 2250:$10.5900
  • 1350:$11.1900
  • 900:$11.8900
  • 450:$12.6900
SCT3105KLGC11
DISTI # 81AC5496
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.105ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 500:$11.8300
  • 250:$12.6500
  • 100:$13.3000
  • 50:$14.2000
  • 25:$15.1000
  • 10:$15.7500
  • 1:$17.1300
SCT3105KLGC11
DISTI # 755-SCT3105KLGC11
ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant
450
  • 1:$16.9600
  • 10:$15.5900
  • 25:$14.9500
  • 100:$13.1700
  • 250:$12.5200
  • 500:$11.7100
SCT3105KLGC11
DISTI # 2947070
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W
RoHS: Compliant
0
  • 10:$17.0800
  • 5:$17.5300
  • 1:$19.0500
SCT3105KLGC11ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant
Americas -
    SCT3105KLGC11
    DISTI # 2947070
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W0
    • 100:£9.5500
    • 50:£10.2000
    • 10:£10.8400
    • 5:£12.2900
    • 1:£12.5500
    圖片 型號 描述
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11

    MOSFET Nch 1200V 24A SiC TO-247N
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11

    MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11-ROHM-SEMI

    SCT3105KL IS AN SIC (SILICON CAR
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    可用性
    庫存:
    888
    訂購:
    2871
    輸入數量:
    SCT3105KLGC11的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$16.96
    US$16.96
    10
    US$15.59
    US$155.90
    25
    US$14.95
    US$373.75
    100
    US$13.17
    US$1 317.00
    250
    US$12.52
    US$3 130.00
    500
    US$11.71
    US$5 855.00
    1000
    US$10.74
    US$10 740.00
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