TGF2819-FL

TGF2819-FL
Mfr. #:
TGF2819-FL
製造商:
Qorvo
描述:
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
生命週期:
製造商新產品
數據表:
TGF2819-FL 數據表
交貨:
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ECAD Model:
更多信息:
TGF2819-FL 更多信息
產品屬性
屬性值
製造商
TriQuint (Qorvo)
產品分類
晶體管 - FET、MOSFET - 單
打包
托盤
部分別名
1118709 772-TGF2819-FS-EVB1
安裝方式
擰緊
工作溫度範圍
- 40 C to + 85 C
技術
氮化鎵碳化矽
配置
單身的
晶體管型
HEMT
獲得
14 dB
輸出功率
100 W
鈀功耗
86 W
最高工作溫度
+ 85 C
最低工作溫度
- 40 C
工作頻率
3.5 GHz
Id 連續漏極電流
7.32 A
Vds-漏-源-擊穿電壓
32 V
晶體管極性
N通道
開發套件
TGF2819-FS/FL EVAL BOARD
VGS-柵極-源極擊穿電壓
- 2.9 V
最大漏柵電壓
145 V
Tags
TGF281, TGF28, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2819-FS/FL RF Power Transistors
Qorvot TGF2819-FS/FL RF Power Transistors provide a greater-than 100W Peak (20W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Designed using TriQuint's proven TQGaN25HV process, the TGF2819-FS/FL RF Power Transistors offer advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The optimization features provided by TGF2819-FS/FL may potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Qorvo TGF2819-FS/FL RF Power Transistors are ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammers.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
TGF2819-FL
DISTI # 772-TGF2819-FL
QorvoRF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
RoHS: Compliant
1
  • 1:$375.0000
TGF2819-FLPCB4B01
DISTI # 772-TGF2819FLPCB4B01
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$1,050.0000
圖片 型號 描述
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L

Thermal Interface Products Thermal Gap Fill Pad
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS-EVB1

Mfr.#: TGF2819-FS-EVB1

OMO.#: OMO-TGF2819-FS-EVB1-1152

RF Development Tools DC-3.5GHz 32V GaN Eval Board
TGF2819-FLPCB4B01

Mfr.#: TGF2819-FLPCB4B01

OMO.#: OMO-TGF2819-FLPCB4B01-1152

RF Development Tools
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L-LEADER-TECH

全新原裝
可用性
庫存:
Available
訂購:
1000
輸入數量:
TGF2819-FL的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$562.50
US$562.50
10
US$534.38
US$5 343.75
100
US$506.25
US$50 625.00
500
US$478.12
US$239 062.50
1000
US$450.00
US$450 000.00
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