TGF2819-FS

TGF2819-FS
Mfr. #:
TGF2819-FS
製造商:
Qorvo
描述:
RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
生命週期:
製造商新產品
數據表:
TGF2819-FS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
TGF2819-FS 更多信息
產品屬性
屬性值
製造商:
克里公司
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵
獲得:
14.5 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
150 V
Vgs - 柵源擊穿電壓:
- 10 V, 2 V
Id - 連續漏極電流:
10.4 A
輸出功率:
75 W
最大漏柵電壓:
50 V
最低工作溫度:
- 40 C
最高工作溫度:
+ 107 C
Pd - 功耗:
52 W
安裝方式:
貼片/貼片
打包:
捲軸
應用:
S 波段雷達和 LTE 基站
配置:
單身的
工作頻率:
3.5 GHz
工作溫度範圍:
- 40 C to + 107 C
品牌:
Wolfspeed / 克里
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
250
子類別:
晶體管
Vgs th - 柵源閾值電壓:
- 3 V
Tags
TGF281, TGF28, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN
TGF2819-FS/FL RF Power Transistors
Qorvot TGF2819-FS/FL RF Power Transistors provide a greater-than 100W Peak (20W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. Designed using TriQuint's proven TQGaN25HV process, the TGF2819-FS/FL RF Power Transistors offer advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. The optimization features provided by TGF2819-FS/FL may potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Qorvo TGF2819-FS/FL RF Power Transistors are ideal for military radar, civilian radar, professional & military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammers.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
TGF2819-FS
DISTI # 772-TGF2819-FS
QorvoRF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
RoHS: Compliant
0
  • 25:$316.7800
TGF2819-FS-EVB1
DISTI # 772-TGF2819-FS-EVB1
QorvoRF Development Tools DC-3.5GHz 32V GaN Eval Board
RoHS: Compliant
2
  • 1:$875.0000
圖片 型號 描述
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L

Thermal Interface Products Thermal Gap Fill Pad
TGF2819-FS

Mfr.#: TGF2819-FS

OMO.#: OMO-TGF2819-FS-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FL

Mfr.#: TGF2819-FL

OMO.#: OMO-TGF2819-FL-318

RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
TGF2819-FS-EVB1

Mfr.#: TGF2819-FS-EVB1

OMO.#: OMO-TGF2819-FS-EVB1-1152

RF Development Tools DC-3.5GHz 32V GaN Eval Board
TGF2819-FLPCB4B01

Mfr.#: TGF2819-FLPCB4B01

OMO.#: OMO-TGF2819-FLPCB4B01-1152

RF Development Tools
TGF280L

Mfr.#: TGF280L

OMO.#: OMO-TGF280L-LEADER-TECH

全新原裝
可用性
庫存:
Available
訂購:
3500
輸入數量:
TGF2819-FS的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
25
US$316.78
US$7 919.50
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