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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC072N03LDGATMA1 DISTI # V72:2272_06384111 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R RoHS: Compliant | 4963 |
|
| BSC072N03LDGATMA1 DISTI # BSC072N03LDGATMA1CT-ND | Infineon Technologies AG | MOSFET 2N-CH 30V 11.5A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 437In Stock |
|
| BSC072N03LDGATMA1 DISTI # BSC072N03LDGATMA1DKR-ND | Infineon Technologies AG | MOSFET 2N-CH 30V 11.5A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 437In Stock |
|
| BSC072N03LDGATMA1 DISTI # BSC072N03LDGATMA1TR-ND | Infineon Technologies AG | MOSFET 2N-CH 30V 11.5A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC072N03LD G DISTI # 30579211 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP RoHS: Compliant | 5018 |
|
| BSC072N03LDGATMA1 DISTI # 31312147 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC072N03LDGATMA1 DISTI # 30737654 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R RoHS: Compliant | 4963 |
|
| BSC072N03LD G DISTI # BSC072N03LD G | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON T/R (Alt: BSC072N03LD G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC072N03LDGATMA1 DISTI # BSC072N03LDGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC072N03LDGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC072N03LDGATMA1. DISTI # 31AC8218 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:57W,No. of Pins:8Pins | 0 |
|
| BSC072N03LD G DISTI # 726-BSC072N03LDG | Infineon Technologies AG | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 RoHS: Compliant | 857 |
|
| BSC072N03LDGATMA1 DISTI # 726-BSC072N03LDGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 RoHS: Compliant | 5179 |
|
| BSC072N03LDGATMA1 DISTI # 8259216P | Infineon Technologies AG | MOSFET N-CH 11.5A 30V OPTIMOS3 TDSON8EP, RL | 3240 |
|
| BSC072N03LDGATMA1 DISTI # BSC072N03LDGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,11.5A,57W,PG-TDSON-8 | 3231 |
|
| BSC072N03LDG | Infineon Technologies AG | 1440 | ||
| BSC072N03LD G DISTI # C1S322000086425 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R RoHS: Compliant | 5018 |
|
| BSC072N03LDGATMA1 DISTI # C1S322000666355 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 4963 |
|
| BSC072N03LDGATMA1 DISTI # C1S322000401509 | Infineon Technologies AG | Trans MOSFET N-CH 30V 11.5A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC072N03LDGATMA1 DISTI # 1775452 | Infineon Technologies AG | MOSFET, N CH, 20A, 30V, PG-TDSON-8 RoHS: Compliant | 4910 |
|
| BSC072N03LDG | Infineon Technologies AG | 30V,20A,Dual N-channel power MOSFET,logic level | 1400 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: BSC010NE2LSATMA1 OMO.#: OMO-BSC010NE2LSATMA1 |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
|
|
Mfr.#: BSC066N06NSATMA1 OMO.#: OMO-BSC066N06NSATMA1 |
MOSFET MV POWER MOS |
|
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Mfr.#: BSC018N04LS G OMO.#: OMO-BSC018N04LS-G |
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
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Mfr.#: BSC032NE2LS OMO.#: OMO-BSC032NE2LS |
MOSFET N-Ch 25V 84A TDSON-8 OptiMOS |
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Mfr.#: BSC065N06LS5ATMA1 OMO.#: OMO-BSC065N06LS5ATMA1 |
MOSFET DIFFERENTIATED MOSFETS |
|
Mfr.#: BSC014N04LS OMO.#: OMO-BSC014N04LS-1190 |
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS |
|
Mfr.#: BSC048N025SG OMO.#: OMO-BSC048N025SG-1190 |
全新原裝 |
|
Mfr.#: BSC057N03LSGATMA1 , TDA8 |
全新原裝 |
|
|
Mfr.#: BSC079N03LSCGATMA1 |
MOSFET N-CH 30V 14A 8TDSON |
|
|
Mfr.#: BSC082N10LSGATMA1 |
MOSFET N-CH 100V 100A TDSON-8 |