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BSC066N06NSATMA1

BSC066N06NSATMA1
Mfr. #:
BSC066N06NSATMA1
製造商:
Infineon Technologies
描述:
MOSFET MV POWER MOS
生命週期:
製造商新產品
數據表:
BSC066N06NSATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
BSC066N06NSATMA1 DatasheetBSC066N06NSATMA1 Datasheet (P4-P6)BSC066N06NSATMA1 Datasheet (P7-P9)BSC066N06NSATMA1 Datasheet (P10)
ECAD Model:
更多信息:
BSC066N06NSATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PG-TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
64 A
Rds On - 漏源電阻：
6.6 mOhms
Vgs th - 柵源閾值電壓：
2.1 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
17 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
46 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
系列：
OptiMOS 5
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
32 S
秋季時間：
3 ns
產品類別：
MOSFET
上升時間：
3 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
12 ns
典型的開啟延遲時間：
7 ns
第 # 部分別名：
BSC066N06NS SP001067000
單位重量：
0.003527 oz
Tags
BSC066, BSC06, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Norms all on 8 ohms

    2019-06-03
    A***o
    A***o
    UA

    Came 3 volt seules,In the photo innotecsQuality is normal, color is correct

    2019-05-02
***et
Trans MOSFET N-CH 60V 64A 8-Pin TDSON T/R
***nell
MOSFET, N-CH, 60V, 64A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 46W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
***ical
Trans MOSFET N-CH 60V 17A Automotive 5-Pin(4+Tab) SO-FL T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 60V 17A, 71A 3.6W 61W Surface Mount 5-DFN (5x6) MOSFET
***enic
60V 17A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel DFN-5 MOSFETs ROHS
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 61W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
NTMFS5 Series 60 V 17 A 6.1 mOhm Single N-Channel MOSFET - DFN-5
***Yang
Trans MOSFET N-CH 60V 71A 8-Pin SO-FL T/R - Tape and Reel
***enic
60V 71A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel SO-8FL MOSFETs ROHS
***ark
NFET SO8FL 40V 68A 6.7MOH / REEL ROHS COMPLIANT: YES
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
*** Source Electronics
Single N-Channel Field Effect Transistor
*** Stop Electro
Power Field-Effect Transistor, 71A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***et
Trans MOSFET N-CH 60V 21.5A 8-Pin PowerPAK SO T/R
*** Americas
MOSFET 60V 6mOhm@10V 60A N-Ch G-IV
***i-Key
MOSFET N-CH 60V 60A PPAK SO-8
***ark
N-Channel 60-V (D-S) Mosfet
*** Europe
N-CH POWERPAK 60V SO-8 BWL
***et Europe
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263
***or
MOSFET N-CH 60V 80A TO263-3
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Electronic
Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***el Nordic
Contact for details
***emi
Single N-Channel Power MOSFET 60V, 70A, 6.5mΩ Power MOSFET 60V, 70A, 6.5 mOhm, Single N-Channel, u8FL, Logic Level
***Yang
Trans MOSFET N-CH 60V 16A 8-Pin WDFN T/R - Tape and Reel
***roFlash
Power Field-Effect Transistor, 16A I(D), 60V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, AEC-Q101, 60V, 70A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 63W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ark
Mosfet Transistor, N Channel, 79 A, 60 V, 0.0071 Ohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,D2Pak,PD 110W,VGS+/-20V
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
型號 製造商 描述 庫存 價格
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5144
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 64A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5976
  • 500:$0.7569
  • 100:$0.9760
  • 10:$1.2350
  • 1:$1.3900
BSC066N06NSATMA1
DISTI # BSC066N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 64A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC066N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5059
  • 5002:$0.4879
  • 10002:$0.4699
  • 25000:$0.4539
  • 50000:$0.4459
BSC066N06NSATMA1
DISTI # 13AC8334		Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power DissipationRoHS Compliant: Yes0
  • 1:$1.1600
  • 10:$0.9850
  • 25:$0.9090
  • 50:$0.8320
  • 100:$0.7560
  • 250:$0.7130
  • 500:$0.6690
  • 1000:$0.5280
BSC066N06NS
DISTI # 726-BSC066N06NS		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 726-BSC066N06NSATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		0
  • 1:$1.1600
  • 10:$0.9850
  • 100:$0.7560
  • 500:$0.6690
  • 1000:$0.5280
  • 5000:$0.4680
BSC066N06NSATMA1
DISTI # 2725811		Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant		0
  • 5:£0.8370
  • 25:£0.7520
  • 100:£0.5780
  • 250:£0.5450
  • 500:£0.5110
BSC066N06NSATMA1
DISTI # 2725811		Infineon Technologies AGMOSFET, N-CH, 60V, 64A, TDSON
RoHS: Compliant		0
  • 1:$2.2200
  • 10:$1.9700
  • 100:$1.5600
  • 500:$1.2100
  • 1000:$0.9530
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Mfr.#: BSC097N06NSATMA1

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Mfr.#: TDP142IRNQT

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可用性
庫存:
Available
訂購:
1987
輸入數量:
BSC066N06NSATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.15
US$1.15
10
US$0.98
US$9.85
100
US$0.76
US$75.60
500
US$0.67
US$334.50
1000
US$0.53
US$528.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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