QS6J11TR

Mfr. #:: QS6J11TR
製造商:: Rohm Semiconductor
描述:: IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN
生命週期:: 製造商新產品
數據表:: QS6J11TR 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 羅門半導體

產品分類: FET - 陣列

系列: QS6J11

打包: Digi-ReelR 替代包裝

安裝方式: 貼片/貼片

包裝盒: SC-74, SOT-457

技術: 矽

工作溫度: 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: TSMT6

配置: 雙重的

FET型: 2 P-Channel (Dual)

最大功率: 600mW

晶體管型: 2 P-Channel

漏源電壓 Vdss: 12V

輸入電容-Ciss-Vds: 770pF @ 6V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 2A

Rds-On-Max-Id-Vgs: 105 mOhm @ 2A, 4.5V

Vgs-th-Max-Id: 1V @ 1mA

柵極電荷-Qg-Vgs: 6.5nC @ 4.5V

鈀功耗: 600 mW

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 35 ns

上升時間: 17 ns

VGS-柵極-源極-電壓: 10 V

Id 連續漏極電流: 2 A

Vds-漏-源-擊穿電壓: - 12 V

Rds-On-Drain-Source-Resistance: 75 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 65 ns

典型開啟延遲時間: 10 ns

Qg-門電荷: 6.5 nC

正向跨導最小值: 2 S

通道模式: 增強

Tags: QS6J11, QS6J1, QS6J, QS6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QS6J11TR 描述

***et: Transistor MOSFET Array Dual P-CH 12V 2A 6-Pin SOT-457T Emboss T/R

*** Source Electronics: Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R / MOSFET 2P-CH 12V 2A TSMT6

***ronik: P+P CHANNEL MOS 2A 12V TSMT6

***Yang: Transistor MOSFET Array Dual P-CH 12V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

***ment14 APAC: MOSFET, PP; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:2.5A; Current Id Max:-2.5A; Drain Source Voltage Vds:-12V; Module Configuration:Dual; On Resistance Rds(on):90mohm; Package / Case:SuperSOT; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

***ical: Trans MOSFET N/P-CH 30V/12V 2.4A/2.5A 6-Pin SuperSOT T/R

***Yang: 12V, P-CH MOSFET,30V, SYNCFET, POWER TRENCH, SSOT6 - Bulk

***ser: MOSFETs 12V P-Channel PowerTrench

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

***eco: Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT

***ure Electronics: P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

***el Electronic: Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402

***nell: MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V

***Yang: Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes

***rchild Semiconductor: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

***p One Stop Global: Trans MOSFET P-CH 30V 3.9A Automotive 6-Pin TSOT-26 T/R

***ure Electronics: P-Channel 30 V 105 mOhm Surface Mount Enhancement Mode Mosfet - TSOT-26

***(Formerly Allied Electronics): 30V P-Channel Enhancement MOSFET TSOT-26

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 12±V VGS

***S: French Electronic Distributor since 1988

***ure Electronics: ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6

***ical: Trans MOSFET P-CH 60V 2.3A Automotive 6-Pin SOT-26 T/R

***ark: Mosfet Bvdss: 41V~60V Sot26 T&r 3K Rohs Compliant: Yes

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS

***nell: MOSFET, AEC-Q101, P CH, -60V, SOT-26; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.3A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

型號	製造商	描述	庫存	價格
QS6J11TR DISTI # 30719429	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R RoHS: Compliant	5785	1000:$0.2818 500:$0.3022 100:$0.3672 50:$0.4411 43:$0.6044
QS6J11TR DISTI # QS6J11CT-ND	ROHM Semiconductor	MOSFET 2P-CH 12V 2A TSMT6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8240In Stock	1000:$0.2416 500:$0.3127 100:$0.3980 10:$0.5330 1:$0.6200
QS6J11TR DISTI # QS6J11DKR-ND	ROHM Semiconductor	MOSFET 2P-CH 12V 2A TSMT6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8240In Stock	1000:$0.2416 500:$0.3127 100:$0.3980 10:$0.5330 1:$0.6200
QS6J11TR DISTI # QS6J11TR-ND	ROHM Semiconductor	MOSFET 2P-CH 12V 2A TSMT6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.2139
QS6J11TR DISTI # QS6J11TR	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R - Tape and Reel (Alt: QS6J11TR) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000
QS6J11TR DISTI # QS6J11TR	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1229 18000:€0.1319 12000:€0.1559 6000:€0.1909 3000:€0.2459
QS6J11TR DISTI # QS6J11TR	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
QS6J11TR DISTI # 755-QS6J11TR	ROHM Semiconductor	MOSFET TRANS MOSFET PCH 12V 2A 6PIN RoHS: Compliant	5780	1:$0.6000 10:$0.4990 100:$0.3040 1000:$0.2350 3000:$0.2300
QS6J11TR DISTI # TMOSS6472	ROHM Semiconductor	P+P CHANNEL MOS 2A 12V TSMT6 RoHS: Compliant	Stock DE - 9000Stock HK - 0Stock US - 0	3000:$0.2120 6000:$0.1999 9000:$0.1878 12000:$0.1696 18000:$0.1636
QS6J11TR	ROHM Semiconductor		3000	1:¥4.6262 100:¥2.6231 1500:¥1.6630 3000:¥1.2390
QS6J11TR	ROHM Semiconductor	MOSFET TRANS MOSFET PCH 12V 2A 6PIN RoHS: Compliant	Americas -

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