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| PartNumber | QS6J11 | QS6J11 TR | QS6J11TR |
| Description | IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN | ||
| Manufacturer | ROHM | - | Rohm Semiconductor |
| Product Category | FETs - Arrays | - | FETs - Arrays |
| Series | - | - | QS6J11 |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SC-74, SOT-457 |
| Technology | - | - | Si |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | TSMT6 |
| Configuration | - | - | Dual |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 600mW |
| Transistor Type | - | - | 2 P-Channel |
| Drain to Source Voltage Vdss | - | - | 12V |
| Input Capacitance Ciss Vds | - | - | 770pF @ 6V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 2A |
| Rds On Max Id Vgs | - | - | 105 mOhm @ 2A, 4.5V |
| Vgs th Max Id | - | - | 1V @ 1mA |
| Gate Charge Qg Vgs | - | - | 6.5nC @ 4.5V |
| Pd Power Dissipation | - | - | 600 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 35 ns |
| Rise Time | - | - | 17 ns |
| Vgs Gate Source Voltage | - | - | 10 V |
| Id Continuous Drain Current | - | - | 2 A |
| Vds Drain Source Breakdown Voltage | - | - | - 12 V |
| Rds On Drain Source Resistance | - | - | 75 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 65 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Qg Gate Charge | - | - | 6.5 nC |
| Forward Transconductance Min | - | - | 2 S |
| Channel Mode | - | - | Enhancement |