IPB50R199CP

Mfr. #:: IPB50R199CP
製造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
生命週期:: 製造商新產品
數據表:: IPB50R199CP 數據表
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ECAD Model:
更多信息:: IPB50R199CP 更多信息

產品屬性
屬性值

製造商: 英飛凌

產品分類: FET - 單

系列: CoolMOS CP

打包: 捲軸

部分別名: IPB50R199CPATMA1 IPB50R199CPXT SP000236092

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 酷摩

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 139 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 10 ns

上升時間: 14 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 17 A

Vds-漏-源-擊穿電壓: 550 V

Rds-On-Drain-Source-Resistance: 199 mOhms

晶體管極性: N通道

典型關斷延遲時間: 80 ns

典型開啟延遲時間: 35 ns

通道模式: 增強

Tags: IPB50R19, IPB50R1, IPB50R, IPB50, IPB5, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB50R199CP 更多信息

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型號	製造商	描述	庫存	價格
IPB50R199CPATMA1 DISTI # 30205356	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	6000:$1.3186 2000:$1.3344 1000:$1.4304
IPB50R199CPATMA1 DISTI # IPB50R199CPATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 550V 17A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.7015
IPB50R199CPATMA1 DISTI # C1S322000471076	Infineon Technologies AG	MOSFETs RoHS: Compliant	1000	1000:$1.6800
IPB50R199CP DISTI # IPB50R199CP	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: IPB50R199CP) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 5000	1000:$1.3950 2000:$1.3377 3000:$1.3196 5000:$1.2682 10000:$1.2519 25000:$1.2206 50000:$1.1908
IPB50R199CPATMA1 DISTI # IPB50R199CPATMA1	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB50R199CPATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 2000	1000:$1.4900 2000:$1.3900 4000:$1.3900 6000:$1.2900 10000:$1.2900
IPB50R199CPATMA1 DISTI # SP000236092	Infineon Technologies AG	Trans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: SP000236092) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.9900 2000:€1.4900 4000:€1.3900 6000:€1.3900 10000:€1.2900
IPB50R199CP DISTI # 726-IPB50R199CP	Infineon Technologies AG	MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP RoHS: Compliant	1258	1:$2.9300 10:$2.4900 100:$2.1600 250:$2.0500 500:$1.8400 1000:$1.5500
IPB50R199CP	Infineon Technologies AG	Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB RoHS: Compliant	13000	1000:$1.3300 500:$1.4000 100:$1.4600 25:$1.5200 1:$1.6400
IPB50R199CPATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB RoHS: Compliant	130	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
IPB50R199CPATMA1 DISTI # 8275280P	Infineon Technologies AG	MOSFET N-CH 17A 550V COOLMOS TO263, RL	1255	100:£1.5480 250:£1.4700 500:£1.3240 1000:£1.1220
IPB50R199CPATMA1 DISTI # XSFT00000025424	Infineon Technologies AG	RoHS: Compliant	4000	1000:$1.9600

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