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FDMS86200DC

FDMS86200DC
Mfr. #:
FDMS86200DC
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 150V/20V N Channel PowerTrench MOSFET
生命週期:
製造商新產品
數據表:
FDMS86200DC 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDMS86200DC 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
DualCool-56-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
150 V
Id - 連續漏極電流：
28 A
Rds On - 漏源電阻：
14 mOhms
Vgs th - 柵源閾值電壓：
3.3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
30 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
125 W
配置：
單身的
商品名：
動力戰壕
打包：
捲軸
高度：
1.05 mm
長度：
6 mm
系列：
FDMS86200DC
晶體管類型：
N通道
寬度：
5 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
32 S
秋季時間：
5 ns
產品類別：
MOSFET
上升時間：
4 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
23 ns
典型的開啟延遲時間：
16 ns
單位重量：
0.003175 oz
Tags
FDMS86200, FDMS8620, FDMS862, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET, Dual CoolTM 56, 150V, 40A, 17mΩ
***Components
In a Pack of 5, N-Channel MOSFET, 40 A, 150 V, 8-Pin Power 56 ON Semiconductor FDMS86200DC
***ure Electronics
Single N-Channel 150 V 3.2 W 42 nC Silicon Surface Mount Mosfet - POWER 56-8
***ical
Trans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R
***an P&S
N-CH PowerTrench MOSFET 150V,40A,17mΩ
***ark
Fet 150V 17.0 Mohm Pqfn56 Rohs Compliant: Yes
***i-Key
MOSF N CH 150V 9.3A POWER 56
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 150V, 40A, DUAL COOL 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Transistor Case Style:Dual Cool 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 150V, 40A, DUAL COOL 56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:150V; Resistenza di Attivazione Rds(on):0.014ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:Dual Cool 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Dual Cool™ MOSFETs
ON Semiconductor Dual Cool™ PowerTrench® MOSFETs provide Dual Cool packaging technology that features bottom- and top-side cooling in a PQFN package. The PQFN footprint is an industry standard and provides performance flexibility for the designer. These Dual Cool MOSFETs feature enhanced dual path thermal performance and improved parasitics over wire-bonded predecessors. The use of a heat sink with Dual Cool packaging technology provides even more impressive results. When a heat sink is used with Dual Cool package technology, synchronous buck converters deliver higher output current and increased power density.Learn More
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
型號 製造商 描述 庫存 價格
FDMS86200DC
DISTI # V36:1790_06338190		ON SemiconductorTrans MOSFET N-CH Si 150V 9.3A 8-Pin Power 56 T/R0
  • 3000000:$1.6630
  • 1500000:$1.6650
  • 300000:$1.7840
  • 30000:$1.9650
  • 3000:$1.9940
FDMS86200DC
DISTI # FDMS86200DCTR-ND		ON SemiconductorMOSFET N-CH 150V 9.3A POWER 56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$1.5994
  • 3000:$1.6618
FDMS86200DC
DISTI # FDMS86200DCCT-ND		ON SemiconductorMOSFET N-CH 150V 9.3A POWER 56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.8018
  • 500:$2.1364
  • 100:$2.5096
  • 10:$3.0630
  • 1:$3.4100
FDMS86200DC
DISTI # FDMS86200DCDKR-ND		ON SemiconductorMOSFET N-CH 150V 9.3A POWER 56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.8018
  • 500:$2.1364
  • 100:$2.5096
  • 10:$3.0630
  • 1:$3.4100
FDMS86200DC
DISTI # FDMS86200DC		ON SemiconductorTrans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R (Alt: FDMS86200DC)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€1.2900
  • 18000:€1.3900
  • 12000:€1.4900
  • 6000:€1.5900
  • 3000:€1.6900
FDMS86200DC
DISTI # FDMS86200DC		ON SemiconductorTrans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Cut TR (SOS) (Alt: FDMS86200DC)
RoHS: Compliant
Min Qty: 3000
Container: Cut Tape		Americas - 0
  • 95:$1.4900
  • 48:$1.5900
  • 24:$1.6900
  • 1:$1.7900
  • 3:$1.7900
  • 6:$1.7900
  • 12:$1.7900
FDMS86200DC
DISTI # FDMS86200DC		ON SemiconductorTrans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200DC)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.3900
  • 3000:$1.4900
  • 6000:$1.4900
  • 12000:$1.4900
  • 18000:$1.4900
FDMS86200DC
DISTI # 96W6425		ON SemiconductorFET 150V 17.0 MOHM PQFN56 / REEL0
  • 30000:$1.4700
  • 18000:$1.4900
  • 12000:$1.5500
  • 6000:$1.6700
  • 3000:$1.7900
  • 1:$1.8700
FDMS86200DC
DISTI # 46AC0797		ON SemiconductorMOSFET, N-CH, 150V, 40A, DUAL COOL 56-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes134
  • 1000:$1.6800
  • 500:$1.9900
  • 250:$2.2200
  • 100:$2.3400
  • 50:$2.4600
  • 25:$2.5800
  • 10:$2.7000
  • 1:$3.1800
FDMS86200DC.
DISTI # 29AC6271		Fairchild Semiconductor CorporationFET 150V 17.0 MOHM PQFN56 ROHS COMPLIANT: YES0
  • 30000:$1.3900
  • 1:$1.4900
FDMS86200DC
DISTI # 512-FDMS86200DC		ON SemiconductorMOSFET 150V/20V N Channel PowerTrench MOSFET
RoHS: Compliant		3207
  • 1:$3.1500
  • 10:$2.6700
  • 100:$2.3200
  • 250:$2.2000
  • 500:$1.9700
  • 1000:$1.6600
  • 3000:$1.5800
FDMS86200DC
DISTI # 8648449P		ON SemiconductorMOSFET N-CH 150V 40A DUAL COOL PQFN8, RL2775
  • 100:£1.7440
  • 50:£2.0080
FDMS86200DCON SemiconductorN-CH PowerTrenchMOSFET 150V,40A,17m7200
  • 1:$4.3300
  • 100:$2.7700
  • 500:$2.2800
  • 1000:$2.1000
FDMS86200DC
DISTI # 2825177		ON SemiconductorMOSFET, N-CH, 150V, 40A, DUAL COOL 56-8
RoHS: Compliant		79
  • 1000:$2.4300
  • 500:$2.6800
  • 250:$3.0500
  • 100:$3.3900
  • 10:$3.9100
  • 1:$4.4800
FDMS86200DC
DISTI # 2825177		ON SemiconductorMOSFET, N-CH, 150V, 40A, DUAL COOL 56-8113
  • 500:£1.5300
  • 250:£1.7100
  • 100:£1.8100
  • 10:£2.0800
  • 1:£2.7500
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NCP51530BDR2G

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BZX84C15VLFHT116

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 Zener Diodes 13.8-15.6V 250mW SOT-23 5mA
RFN2LAM6STFTR

Mfr.#: RFN2LAM6STFTR

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 Diodes - General Purpose, Power, Switching 600V VR 1.5A IO SOD-128; PMDTM
BAS521-HF

Mfr.#: BAS521-HF

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 Diodes - General Purpose, Power, Switching SMD Switching Diode 300V Rev. 250mA Fwd.
RFU02VSM6STR

Mfr.#: RFU02VSM6STR

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 Diodes - General Purpose, Power, Switching 600V Vrm 0.2A Io Recovery Diode
UCC28780DR

Mfr.#: UCC28780DR

OMO.#: OMO-UCC28780DR

 Switching Controllers ACTIVE CLAMP FLYBACK
KTR03EZPF3004

Mfr.#: KTR03EZPF3004

OMO.#: OMO-KTR03EZPF3004

 Thick Film Resistors - SMD 0603 3Mohm 1% High VoltageAEC-Q200
RFU02VSM6STR

Mfr.#: RFU02VSM6STR

OMO.#: OMO-RFU02VSM6STR-ROHM-SEMI

 DIODE GP 600V 200MA TUMD2SM
RFN2LAM6STFTR

Mfr.#: RFN2LAM6STFTR

OMO.#: OMO-RFN2LAM6STFTR-ROHM-SEMI

 SUPER FAST RECOVERY DIODE AEC-Q1
可用性
庫存:
Available
訂購:
1985
輸入數量:
FDMS86200DC的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.15
US$3.15
10
US$2.67
US$26.70
100
US$2.32
US$232.00
250
US$2.20
US$550.00
500
US$1.97
US$985.00
1000
US$1.66
US$1 660.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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