IPB60R120P7ATMA1

IPB60R120P7ATMA1
Mfr. #:
IPB60R120P7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-CH TO263-3
生命週期:
製造商新產品
數據表:
IPB60R120P7ATMA1 數據表
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IPB60R120P7ATMA1 更多信息
產品屬性
屬性值
Tags
IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 26A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型號 製造商 描述 庫存 價格
IPB60R120P7ATMA1
DISTI # V72:2272_18787577
Infineon Technologies AGHIGH POWER_NEW950
  • 500:$2.1410
  • 250:$2.4120
  • 100:$2.5400
  • 25:$2.6320
  • 10:$2.9240
  • 1:$3.7796
IPB60R120P7ATMA1
DISTI # V36:1790_18787577
Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$1.5240
  • 500000:$1.5260
  • 100000:$1.6640
  • 10000:$1.8870
  • 1000:$1.9240
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 5000:$1.7586
  • 2000:$1.8273
  • 1000:$1.9235
IPB60R120P7ATMA1
DISTI # 33092983
Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$1.6389
IPB60R120P7ATMA1
DISTI # 33590324
Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$2.7812
IPB60R120P7ATMA1
DISTI # 32928341
Infineon Technologies AGHIGH POWER_NEW950
  • 4:$3.7796
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1
Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R120P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 4000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
IPB60R120P7ATMA1
DISTI # SP001664922
Infineon Technologies AGHIGH POWER_NEW (Alt: SP001664922)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€1.3900
  • 6000:€1.4900
  • 4000:€1.5900
  • 2000:€1.6900
  • 1000:€1.7900
IPB60R120P7ATMA1
DISTI # 49AC7996
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes0
  • 500:$2.1900
  • 250:$2.4400
  • 100:$2.5800
  • 50:$2.7100
  • 25:$2.8400
  • 10:$2.9700
  • 1:$3.4900
IPB60R120P7ATMA1
DISTI # 726-IPB60R120P7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
17096
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5500
  • 250:$2.4200
  • 500:$2.1700
  • 1000:$1.8300
  • 2000:$1.7400
IPB60R120P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant
1000Reel
  • 1000:$1.7000
IPB60R120P7ATMA1
DISTI # 2841644
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263
RoHS: Compliant
0
  • 1000:$2.6200
  • 500:$2.6700
  • 250:$2.8200
  • 100:$2.9800
  • 10:$3.3700
  • 1:$3.6100
IPB60R120P7ATMA1
DISTI # XSFP00000130966
Infineon Technologies AG 
RoHS: Compliant
2000 in Stock0 on Order
  • 2000:$2.2700
  • 1000:$2.4300
IPB60R120P7ATMA1
DISTI # 2841644
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-2630
  • 500:£1.7000
  • 250:£1.8800
  • 100:£1.9900
  • 10:£2.2900
  • 1:£3.0300
圖片 型號 描述
IPB60R120P7ATMA1

Mfr.#: IPB60R120P7ATMA1

OMO.#: OMO-IPB60R120P7ATMA1

MOSFET HIGH POWER_NEW
IPB60R125CFD7ATMA1

Mfr.#: IPB60R125CFD7ATMA1

OMO.#: OMO-IPB60R125CFD7ATMA1

MOSFET
IPB60R125CPATMA1

Mfr.#: IPB60R125CPATMA1

OMO.#: OMO-IPB60R125CPATMA1

MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
IPB60R125C6ATMA1

Mfr.#: IPB60R125C6ATMA1

OMO.#: OMO-IPB60R125C6ATMA1

MOSFET HIGH POWER_LEGACY
IPB60R125CPXT

Mfr.#: IPB60R125CPXT

OMO.#: OMO-IPB60R125CPXT-1190

Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R125CPATMA1)
IPB60R125C6ATMA1

Mfr.#: IPB60R125C6ATMA1

OMO.#: OMO-IPB60R125C6ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 600V 30A TO263
IPB60R125C6S

Mfr.#: IPB60R125C6S

OMO.#: OMO-IPB60R125C6S-1190

全新原裝
IPB60R125CP  6R125P

Mfr.#: IPB60R125CP 6R125P

OMO.#: OMO-IPB60R125CP-6R125P-1190

全新原裝
IPB60R125CPATMA1

Mfr.#: IPB60R125CPATMA1

OMO.#: OMO-IPB60R125CPATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 600V 25A TO263
IPB60R125CPS

Mfr.#: IPB60R125CPS

OMO.#: OMO-IPB60R125CPS-1190

全新原裝
可用性
庫存:
Available
訂購:
2000
輸入數量:
IPB60R120P7ATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.61
US$2.61
10
US$2.48
US$24.79
100
US$2.35
US$234.90
500
US$2.22
US$1 109.25
1000
US$2.09
US$2 088.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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