IXFK32N80P

IXFK32N80P
Mfr. #:
IXFK32N80P
製造商:
Littelfuse
描述:
Darlington Transistors MOSFET 32 Amps 800V 0.27 Rds
生命週期:
製造商新產品
數據表:
IXFK32N80P 數據表
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ECAD Model:
更多信息:
IXFK32N80P 更多信息
產品屬性
屬性值
製造商
IXYS
產品分類
FET - 單
系列
IXFK32N80
打包
管子
單位重量
0.352740 oz
安裝方式
通孔
商品名
PolarHV HiPerFET
包裝盒
TO-264-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
830 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
24 ns
上升時間
24 ns
VGS-柵極-源極-電壓
30 V
Id 連續漏極電流
32 A
Vds-漏-源-擊穿電壓
800 V
VGS-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Resistance
270 mOhms
晶體管極性
N通道
典型關斷延遲時間
85 ns
典型開啟延遲時間
30 ns
Qg-門電荷
150 nC
正向跨導最小值
23 S
通道模式
增強
Tags
IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 800V 32A TO-264
***ark
Mosfet, N, To-264; Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:32A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
型號 製造商 描述 庫存 價格
IXFK32N80P
DISTI # IXFK32N80P-ND
IXYS CorporationMOSFET N-CH 800V 32A TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube
Temporarily Out of Stock
  • 25:$10.5008
IXFK32N80P
DISTI # 747-IXFK32N80P
IXYS CorporationMOSFET 32 Amps 800V 0.27 Rds
RoHS: Compliant
25
  • 1:$13.0500
  • 10:$11.8700
  • 25:$10.9800
  • 50:$10.1000
  • 100:$9.8500
  • 250:$9.0300
  • 500:$8.2000
  • 1000:$7.4800
IXFK32N80P
DISTI # 1427309
IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant
0
  • 1:£10.3700
  • 5:£9.8700
  • 10:£8.3000
  • 50:£7.6500
  • 100:£7.4500
圖片 型號 描述
IXFK300N20X3

Mfr.#: IXFK300N20X3

OMO.#: OMO-IXFK300N20X3

MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm
IXFK360N15T2

Mfr.#: IXFK360N15T2

OMO.#: OMO-IXFK360N15T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK36N60P

Mfr.#: IXFK36N60P

OMO.#: OMO-IXFK36N60P

MOSFET 600V 36A
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P

MOSFET 32 Amps 1000V 0.32 Rds
IXFK320N17T2

Mfr.#: IXFK320N17T2

OMO.#: OMO-IXFK320N17T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK300N20X3

Mfr.#: IXFK300N20X3

OMO.#: OMO-IXFK300N20X3-IXYS-CORPORATION

200V/300A ULTRA JUNCTION X3-CLAS
IXFK30N100Q2

Mfr.#: IXFK30N100Q2

OMO.#: OMO-IXFK30N100Q2-IXYS-CORPORATION

MOSFET N-CH 1000V 30A TO-264
IXFK32N50Q

Mfr.#: IXFK32N50Q

OMO.#: OMO-IXFK32N50Q-IXYS-CORPORATION

MOSFET 32 Amps 500V 0.15 Rds
IXFK32N80Q3

Mfr.#: IXFK32N80Q3

OMO.#: OMO-IXFK32N80Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
IXFK36N60

Mfr.#: IXFK36N60

OMO.#: OMO-IXFK36N60-IXYS-CORPORATION

MOSFET 600V 36A
可用性
庫存:
Available
訂購:
3000
輸入數量:
IXFK32N80P的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$11.22
US$11.22
10
US$10.66
US$106.59
100
US$10.10
US$1 009.80
500
US$9.54
US$4 768.50
1000
US$8.98
US$8 976.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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