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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPB35N10S3L26ATMA1 DISTI # V72:2272_06384799 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 858 |
|
| IPB35N10S3L26ATMA1 DISTI # IPB35N10S3L26ATMA1-ND | Infineon Technologies AG | MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB35N10S3L26ATMA1 DISTI # 33079428 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB35N10S3L26ATMA1 DISTI # 26195596 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 858 |
|
| IPB35N10S3L26ATMA1 DISTI # IPB35N10S3L26ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB35N10S3L26ATMA1 DISTI # SP000776044 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 (Alt: SP000776044) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
| IPB35N10S3L26ATMA1 DISTI # 34AC1657 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 100V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0203ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes | 2039 |
|
| IPB35N10S3L26ATMA1 DISTI # 726-IPB35N10S3L26ATM | Infineon Technologies AG | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant | 1442 |
|
| IPB35N10S3L-26 DISTI # 726-IPB35N10S3L-26 | Infineon Technologies AG | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant | 1110 |
|
| IPB35N10S3L-26 | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 100V, 0.0322OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 248 |
|
| IPB35N10S3L26ATMA1 DISTI # 2781070 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 100V, TO-263 RoHS: Compliant | 2024 |
|
| IPB35N10S3L26ATMA1 DISTI # 2781070 | Infineon Technologies AG | MOSFET, AEC-Q101, N-CH, 100V, TO-263 | 2039 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
|
Mfr.#: IPB35N10S3L-26 OMO.#: OMO-IPB35N10S3L-26 |
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T |
|
|
Mfr.#: IPB35N12S3L26ATMA1 OMO.#: OMO-IPB35N12S3L26ATMA1 |
MOSFET N-CHANNEL 100+ |
|
|
Mfr.#: IPB35N10S3L26ATMA1 |
MOSFET N-CH TO263-3 |
|
Mfr.#: IPB35N12S3L26ATMA1 |
MOSFET N-CHANNEL_100+ |
|
Mfr.#: IPB35N10S3L-26 OMO.#: OMO-IPB35N10S3L-26-1190 |
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T |
|
Mfr.#: IPB35N10S3L-26(3N10L26) |
全新原裝 |