IPB35N10

IPB35N10S3L-26 vs IPB35N10S3L26ATMA1 vs IPB35N10S3L-26(3N10L26)

 
PartNumberIPB35N10S3L-26IPB35N10S3L26ATMA1IPB35N10S3L-26(3N10L26)
DescriptionMOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-TMOSFET N-CH TO263-3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance20.3 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation71 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS-TXPB35N10-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesIPB35N10S3L26ATMA1 IPB35N1S3L26XT SP000776044--
Unit Weight0.139332 oz--
Part Aliases-IPB35N10S3L-26 IPB35N10S3L26XT SP000776044-
Package Case-TO-263-3-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB35N10S3L-26 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
IPB35N10S3L26ATMA1 MOSFET N-CH TO263-3
IPB35N10S3L-26 MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
IPB35N10S3L-26(3N10L26) 全新原裝
Top