STU6N65M2

STU6N65M2
Mfr. #:
STU6N65M2
製造商:
STMicroelectronics
描述:
MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
生命週期:
製造商新產品
數據表:
STU6N65M2 數據表
交貨:
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ECAD Model:
更多信息:
STU6N65M2 更多信息 STU6N65M2 Product Details
產品屬性
屬性值
製造商:
意法半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-251-3
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
4 A
Rds On - 漏源電阻:
1.35 Ohms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
25 V
Qg - 門電荷:
9.8 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
60 W
商品名:
網狀網
打包:
管子
產品:
功率MOSFET
系列:
STU6N65M2
品牌:
意法半導體
秋季時間:
20 ns
產品類別:
MOSFET
上升時間:
7 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
6.5 ns
典型的開啟延遲時間:
19 ns
單位重量:
0.139332 oz
Tags
STU6N65, STU6N6, STU6N, STU6, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
***et Europe
Trans MOSFET N-CH 650V 4A 3-Pin IPAK Tube
***i-Key
MOSFET N-CH 650V 4A IPAK
***ronik
N-CH 650V 4A 1350mOhm TO251
***ark
Ptd High Voltage
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 650V, 4A, TO-251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, CANALE N, 650V, 4A, TO-251-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):1.2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型號 製造商 描述 庫存 價格
STU6N65M2
DISTI # 30609733
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 50:$0.8377
  • 13:$1.0863
STU6N65M2
DISTI # 497-15044-5-ND
STMicroelectronicsMOSFET N-CH 650V 4A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
770In Stock
  • 1050:$0.7013
  • 525:$0.8882
  • 150:$1.1454
  • 75:$1.3091
  • 1:$1.6400
STU6N65M2
DISTI # C1S730200975386
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant
50
  • 50:$0.6630
  • 10:$0.8590
  • 1:$1.6500
STU6N65M2
DISTI # STU6N65M2
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin IPAK Tube - Rail/Tube (Alt: STU6N65M2)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.6369
  • 6000:$0.6069
  • 12000:$0.5789
  • 18000:$0.5539
  • 30000:$0.5419
STU6N65M2
DISTI # 40Y2611
STMicroelectronicsPower MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes1382
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9140
  • 500:$0.8080
  • 1000:$0.6380
  • 2500:$0.5920
  • 10000:$0.5450
STU6N65M2
DISTI # 511-STU6N65M2
STMicroelectronicsMOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
RoHS: Compliant
2523
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9140
  • 500:$0.8080
  • 1000:$0.6380
  • 3000:$0.5660
  • 9000:$0.5450
STU6N65M2-S
DISTI # 511-STU6N65M2-S
STMicroelectronicsMOSFET0
  • 3000:$0.4130
STU6N65M2STMicroelectronics 812
    STU6N65M2ST Microwave CorporationPower Field-Effect Transistor
    RoHS: Compliant
    Europe - 3000
      STU6N65M2STMicroelectronics 3544
        STU6N65M2
        DISTI # 2460384
        STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-251-3
        RoHS: Compliant
        1382
        • 1:$2.2200
        • 10:$1.8800
        • 100:$1.4500
        • 500:$1.2900
        • 1000:$1.0100
        • 3000:$0.8960
        • 9000:$0.8630
        STU6N65M2
        DISTI # 2460384
        STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-251-3
        RoHS: Compliant
        1406
        • 5:£1.0500
        • 25:£0.9490
        • 100:£0.7310
        • 250:£0.6880
        • 500:£0.6450
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        N-CHANNEL 900 V, 2.1 OHM TYP., 3
        可用性
        庫存:
        Available
        訂購:
        1500
        輸入數量:
        STU6N65M2的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1
        US$1.40
        US$1.40
        10
        US$1.19
        US$11.90
        100
        US$0.91
        US$91.40
        500
        US$0.81
        US$404.00
        1000
        US$0.64
        US$638.00
        3000
        US$0.57
        US$1 698.00
        9000
        US$0.54
        US$4 905.00
        從...開始
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