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IGW75N65H5XKSA1

IGW75N65H5XKSA1
Mfr. #:
IGW75N65H5XKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
生命週期:
製造商新產品
數據表:
IGW75N65H5XKSA1 數據表
交貨:
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ECAD Model:
更多信息:
IGW75N65H5XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.65 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
120 A
Pd - 功耗：
395 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 H5
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IGW75N65H5 SP001257936
單位重量：
0.215171 oz
Tags
IGW7, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***an P&S
650V,120A,High Speed IGBT
***i-Key
IGBT TRENCH 650V 120A TO247-3
***ronik
IGBT 650V 75A 1.65V TO247-3
***ark
Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGOLO, 650V, 120A, TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:395W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
型號 製造商 描述 庫存 價格
IGW75N65H5XKSA1
DISTI # V36:1790_06377901		Infineon Technologies AGTrans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube0
    IGW75N65H5XKSA1
    DISTI # IGW75N65H5XKSA1-ND    		Infineon Technologies AGIGBT TRENCH 650V 120A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		660In Stock
    • 2640:$2.7625
    • 720:$3.4393
    • 240:$4.0401
    • 25:$4.6616
    • 10:$4.9310
    • 1:$5.4900
    IGW75N65H5XKSA1
    DISTI # IGW75N65H5XKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW75N65H5XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1200:$2.4900
    • 2400:$2.4900
    • 720:$2.5900
    • 480:$2.6900
    • 240:$2.7900
    IGW75N65H5XKSA1
    DISTI # 34AC1616    		Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes336
    • 500:$3.3000
    • 250:$3.6900
    • 100:$3.8800
    • 50:$4.0800
    • 25:$4.2800
    • 10:$4.4800
    • 1:$5.2700
    IGW75N65H5XKSA1
    DISTI # 726-IGW75N65H5XKSA1    		Infineon Technologies AGIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e12
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8400
    • 250:$3.6500
    • 500:$3.2700
    IGW75N65H5XKSA1
    DISTI # 2781022    		Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247
    RoHS: Compliant    		336
    • 1000:$3.6300
    • 500:$3.8000
    • 250:$4.0100
    • 100:$4.2400
    • 10:$4.7900
    • 1:$5.1200
    IGW75N65H5XKSA1
    DISTI # 2781022    		Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247362
    • 500:£2.4700
    • 250:£2.7600
    • 100:£2.9000
    • 10:£3.3500
    • 1:£3.9400
    圖片 型號 描述
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    Mfr.#: IGW50N65F5FKSA1

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    AIGW50N65F5XKSA1

    Mfr.#: AIGW50N65F5XKSA1

    OMO.#: OMO-AIGW50N65F5XKSA1-INFINEON-TECHNOLOGIES

    		 IGBT 650V TO247-3
    IGW50N65F5

    Mfr.#: IGW50N65F5

    OMO.#: OMO-IGW50N65F5-1190

    		 IGBT PRODUCTS (Alt: IGW50N65F5)
    SI8231BB-D-IS1

    Mfr.#: SI8231BB-D-IS1

    OMO.#: OMO-SI8231BB-D-IS1-SILICON-LABS

    		 Gate Drivers 2.5kV 0.5A High/Low ISOdrive
    可用性
    庫存:
    430
    訂購:
    2413
    輸入數量:
    IGW75N65H5XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$5.22
    US$5.22
    10
    US$4.44
    US$44.40
    100
    US$3.84
    US$384.00
    250
    US$3.65
    US$912.50
    500
    US$3.27
    US$1 635.00
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