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IGW50N65F5FKSA1

IGW50N65F5FKSA1
Mfr. #:
IGW50N65F5FKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命週期:
製造商新產品
數據表:
IGW50N65F5FKSA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IGW50N65F5FKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
集電極-發射極飽和電壓：
1.6 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
80 A
Pd - 功耗：
305 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
TRENCHSTOP 5 F5
打包：
管子
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IGW50N65F5 SP000973426
單位重量：
1.340411 oz
Tags
IGW50N65F, IGW50N65, IGW50N, IGW5, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW50N65F5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ical
Trans IGBT Chip N-CH 650V 80A
***i-Key
IGBT 650V 80A 305W PG-TO247-3
***ronik
IGBT 650V 50A 1.6V TO247-3
***ark
IGBT, 650V, 50A, TO247-3
***ukat
650V 80A 305W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 50A, TO247-3; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 50A, TO247-3; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:305W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型號 製造商 描述 庫存 價格
IGW50N65F5FKSA1
DISTI # V99:2348_06378872		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 100:$2.3350
  • 10:$2.7260
  • 1:$3.1920
IGW50N65F5FKSA1
DISTI # IGW50N65F5FKSA1-ND		Infineon Technologies AGIGBT 650V 80A 305W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		30In Stock
  • 1200:$2.6891
  • 720:$3.1885
  • 240:$3.7455
  • 10:$4.5710
  • 1:$5.0900
IGW50N65F5FKSA1
DISTI # 32700397		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 5:$2.1655
IGW50N65F5FKSA1
DISTI # 26986810		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 100:$2.3350
  • 10:$2.7260
  • 3:$3.1920
IGW50N65F5FKSA1
DISTI # SP000973426		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973426)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 480
  • 1:€2.5900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.1900
  • 100:€2.0900
  • 500:€1.9900
  • 1000:€1.8900
IGW50N65F5FKSA1
DISTI # IGW50N65F5FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65F5FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.5900
  • 480:$2.4900
  • 960:$2.3900
  • 1440:$2.2900
  • 2400:$2.2900
IGW50N65F5
DISTI # 726-IGW50N65F5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		216
  • 1:$4.8400
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
IGW50N65F5FKSA1
DISTI # 726-IGW50N65F5FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		0
  • 1:$4.8400
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
IGW50N65F5FKSA1
DISTI # 1107426P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU3068
  • 400:£1.8450
  • 200:£1.8900
  • 80:£1.9400
  • 20:£2.0930
IGW50N65F5FKSA1
DISTI # IGW50N65F5		Infineon Technologies AG650V 80A 305W TO247
RoHS: Compliant		230
  • 1:€5.9500
  • 10:€2.9500
  • 50:€1.9500
  • 100:€1.8800
IGW50N65F5FKSA1
DISTI # 2363279		Infineon Technologies AGIGBT, 650V, 50A, TO247-3
RoHS: Compliant		88
  • 500:£1.5700
  • 250:£1.7400
  • 100:£1.8400
  • 10:£2.1200
  • 1:£2.8100
IGW50N65F5FKSA1
DISTI # XSKDRABS0030187		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$3.2400
  • 240:$3.4800
圖片 型號 描述
ADM3222ARWZ

Mfr.#: ADM3222ARWZ

OMO.#: OMO-ADM3222ARWZ

 RS-232 Interface IC High-Speed 2-Channel 3.3V
IHW25N120E1XKSA1

Mfr.#: IHW25N120E1XKSA1

OMO.#: OMO-IHW25N120E1XKSA1

 IGBT Transistors IGBT PRODUCTS
AIGW50N65F5XKSA1

Mfr.#: AIGW50N65F5XKSA1

OMO.#: OMO-AIGW50N65F5XKSA1

 IGBT Transistors DISCRETES
IHW15N120E1XKSA1

Mfr.#: IHW15N120E1XKSA1

OMO.#: OMO-IHW15N120E1XKSA1

 IGBT Transistors IGBT PRODUCTS
IKW50N65F5FKSA1

Mfr.#: IKW50N65F5FKSA1

OMO.#: OMO-IKW50N65F5FKSA1

 IGBT Transistors IGBT PRODUCTS
IGW75N65H5XKSA1

Mfr.#: IGW75N65H5XKSA1

OMO.#: OMO-IGW75N65H5XKSA1

 IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
IGW50N65F5

Mfr.#: IGW50N65F5

OMO.#: OMO-IGW50N65F5

 IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
C2M1000170D

Mfr.#: C2M1000170D

OMO.#: OMO-C2M1000170D

 MOSFET SIC MOSFET 1700V RDS ON 1 Ohm
C2M0280120D

Mfr.#: C2M0280120D

OMO.#: OMO-C2M0280120D

 MOSFET SIC MOSFET 1200V RDS ON 280 mOhm
C3M0120090D

Mfr.#: C3M0120090D

OMO.#: OMO-C3M0120090D

 MOSFET G3 SiC MOSFET 900V, 120mOhm
可用性
庫存:
480
訂購:
2463
輸入數量:
IGW50N65F5FKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.84
US$4.84
10
US$4.11
US$41.10
100
US$3.56
US$356.00
250
US$3.38
US$845.00
500
US$3.03
US$1 515.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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