C3M0120100K

Mfr. #:: C3M0120100K
製造商:: N/A
描述:: MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4
生命週期:: 製造商新產品
數據表:: C3M0120100K 數據表
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ECAD Model:
更多信息:: C3M0120100K 更多信息

產品屬性
屬性值

製造商：: 克里公司

產品分類：: MOSFET

RoHS：: Y

技術：: 碳化矽

安裝方式：: 通孔

包裝/案例：: TO-247-4

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 1 kV

Id - 連續漏極電流：: 22 A

Rds On - 漏源電阻：: 120 mOhms

Vgs th - 柵源閾值電壓：: 1.8 V

Vgs - 柵源電壓：: 15 V, - 4 V

Qg - 門電荷：: 21.5 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 83 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

晶體管類型：: 1 N-Channel

品牌：: Wolfspeed / 克里

正向跨導 - 最小值：: 7.7 S

秋季時間：: 8 ns

產品類別：: MOSFET

上升時間：: 15 ns

出廠包裝數量：: 30

子類別：: MOSFET

典型關斷延遲時間：: 19 ns

典型的開啟延遲時間：: 31 ns

單位重量：: 0.211644 oz

Tags: C3M01, C3M0, C3M

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

C3M0120100K 描述

***ark: Mosfet, N-Ch, 1Kv, 22A, To-247-4 Rohs Compliant: Yes

***i-Key: MOSFET N-CH 1000V 22A TO247-4L

***hardson RFPD: SILICON CARBIDE MOSFETS

C3M0120100K 更多信息

C3M0120100K Silicon Carbide Power MOSFET: Wolfspeed / Cree C3M0120100K Silicon Carbide Power MOSFET has 1kV in an optimized package suitable for fast switching devices. The C3M0120100K enhanced four lead TO-247-4 package provides lower switching losses with minimal gate circuit ringing due to the Kelvin gate connection. This increases creepage distance to best support operation of these higher voltage discrete devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the 1kV device addresses many power design challenges by providing a unique device. C3M0120100K has low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses. Learn More

Market price

型號	製造商	描述	庫存	價格
C3M0120100K DISTI # V99:2348_17016192	Cree, Inc.	1000V, 120 MOHM, G3 SIC MOSFET	549	100:$6.9430 25:$7.0670 10:$7.8520 1:$9.5975
C3M0120100K DISTI # C3M0120100K-ND	Wolfspeed	MOSFET N-CH 1000V 22A TO247-4L RoHS: Compliant Min Qty: 1 Container: Tube	433In Stock	100:$8.7248 1:$8.7500
C3M0120100K DISTI # 30730036	Cree, Inc.	1000V, 120 MOHM, G3 SIC MOSFET	549	1:$9.5975
C3M0120100K DISTI # 05AC8339	Wolfspeed	MOSFET, N-CH, 1KV, 22A, TO-247-4 ROHS COMPLIANT: YES	30	1:$7.6000 10:$7.6000 25:$7.6000 50:$7.6000 100:$7.6000 250:$7.6000 500:$7.6000
C3M0120100K DISTI # 941-C3M0120100K	Cree, Inc.	MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 RoHS: Compliant	924	1:$8.7500 100:$8.4100 500:$8.0000
C3M0120100K DISTI # 2687504	Wolfspeed	MOSFET, N-CH, 1KV, 22A, TO-247-4 RoHS: Compliant	1015	1:$14.6000
C3M0120100K DISTI # 2687504	Wolfspeed	MOSFET, N-CH, 1KV, 22A, TO-247-4 RoHS: Compliant	1015	100:£6.1800 50:£6.2400 10:£6.2900 5:£6.3500 1:£7.2300
C3M0120100K DISTI # C3M0120100K	Wolfspeed	SILICON CARBIDE MOSFETS RoHS: Compliant	0	1:$7.5700 11:$7.3400 51:$7.0300

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