| PartNumber | C3M0120090J | C3M0120090D | C3M0120090J-TR |
| Description | MOSFET G3 SiC MOSFET 900V, 120 mOhm | MOSFET G3 SiC MOSFET 900V, 120mOhm | MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm |
| Manufacturer | Cree, Inc. | Cree, Inc. | Cree, Inc. |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | SiC | SiC | SiC |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | TO-263-7 | TO-247-3 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | 900 V | 900 V |
| Id Continuous Drain Current | 22 A | 23 A | 22 A |
| Rds On Drain Source Resistance | 170 mOhms | 120 mOhms | 170 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.8 V | 2.1 V | 1.8 V |
| Vgs Gate Source Voltage | 18 V, - 8 V | - | 18 V, - 8 V |
| Qg Gate Charge | 17.3 nC | 17.3 nC | 17.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 83 W | 97 W | 83 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Reel |
| Product | Power MOSFET | Power MOSFET | Power MOSFET |
| Type | Silicon Carbide MOSFET | Silicon Carbide MOSFET | Silicon Carbide MOSFET |
| Brand | Wolfspeed / Cree | Wolfspeed / Cree | Wolfspeed / Cree |
| Forward Transconductance Min | 6.7 S | - | 6.7 S |
| Fall Time | 5 ns | 8 ns | 5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 10 ns | 9 ns |
| Factory Pack Quantity | 50 | 30 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 25 ns | 15 ns |
| Typical Turn On Delay Time | 12.5 ns | 27 ns | 12.5 ns |
| Unit Weight | 0.056438 oz | 1.340411 oz | 0.056438 oz |
| Height | - | 21.1 m | - |
| Length | - | 16.13 mm | - |
| Width | - | 5.21 mm | - |
| Moisture Sensitive | - | - | Yes |