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HGTG30N60B3D

HGTG30N60B3D
Mfr. #:
HGTG30N60B3D
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V IGBT UFS N-Channel
生命週期:
製造商新產品
數據表:
HGTG30N60B3D 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.45 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
60 A
Pd - 功耗：
208 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
HGTG30N60B3D
打包：
管子
連續集電極電流 Ic 最大值：
60 A
高度：
20.82 mm
長度：
15.87 mm
寬度：
4.82 mm
品牌：
安森美半導體/飛兆半導體
連續集電極電流：
60 A
柵極-發射極漏電流：
+/- 250 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
第 # 部分別名：
HGTG30N60B3D_NL
單位重量：
0.225401 oz
Tags
HGTG30N60B3D, HGTG30N60B3, HGTG30N60B, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT Single Transistor, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 RoHS Compliant: Yes
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast
***et
600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST
***p One Stop Japan
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG30N60B3D Series 600 V 60 A Flange Mount UFS N-Channel IGBT-TO-247
***ser
IGBTs 600V, IGBT UFS N-Channel
***i-Key
IGBT N-CH UFS 600V 30A TO-247
***trelec
IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 200 ns Power dissipation: 208 W
***Semiconductor
600V, PT IGBT
***ment14 APAC
Prices include import duty and tax. IGBT,N CH,600V,30A,TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:208W; Transistor Type:IGBT
***nell
IGBT,N CH,600V,30A,TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.9V; Dissipazione di Potenza Pd:208W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018); Dissipazione di Potenza Max:208W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
型號 製造商 描述 庫存 價格
HGTG30N60B3D
DISTI # V99:2348_06359031		ON SemiconductorPTPIGBT TO247 60A 600V204
  • 500:$4.0640
  • 250:$4.2640
  • 100:$4.6150
  • 25:$5.1460
  • 10:$5.4660
  • 1:$5.9900
HGTG30N60B3D
DISTI # HGTG30N60B3D-ND		ON SemiconductorIGBT 600V 60A 208W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		1604In Stock
  • 900:$4.4340
  • 450:$4.8630
  • 10:$6.1500
  • 1:$6.8100
HGTG30N60B3D
DISTI # 26882380		ON SemiconductorPTPIGBT TO247 60A 600V204
  • 500:$4.0640
  • 250:$4.2640
  • 100:$4.6150
  • 25:$5.1460
  • 10:$5.4660
  • 2:$5.9900
HGTG30N60B3D
DISTI # 30618810		ON SemiconductorPTPIGBT TO247 60A 600V58
  • 50:$4.4752
  • 10:$4.7940
  • 4:$6.6045
HGTG30N60B3D
DISTI # HGTG30N60B3D		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG30N60B3D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€3.7900
  • 10:€3.4900
  • 25:€3.2900
  • 50:€3.1900
  • 100:€3.0900
  • 500:€2.9900
  • 1000:€2.7900
HGTG30N60B3D
DISTI # HGTG30N60B3D		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60B3D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$4.4900
  • 900:$4.3900
  • 1800:$4.3900
  • 2700:$4.2900
  • 4500:$4.1900
HGTG30N60B3D
DISTI # 58K1592		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1592)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$6.4900
  • 10:$5.8600
  • 25:$5.5900
  • 50:$5.2200
  • 100:$4.8500
  • 250:$4.6400
HGTG30N60B3D
DISTI # 58K1592		ON SemiconductorSINGLE IGBT, 600V, 60A,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes456
  • 250:$4.8700
  • 100:$5.0800
  • 50:$5.4500
  • 25:$5.8200
  • 10:$6.0900
  • 1:$6.7200
HGTG30N60B3D
DISTI # 512-HGTG30N60B3D		ON SemiconductorIGBT Transistors 600V IGBT UFS N-Channel
RoHS: Compliant		414
  • 1:$6.4800
  • 10:$5.8500
  • 25:$5.5800
  • 100:$4.8500
  • 250:$4.6300
  • 500:$4.2200
HGTG30N60B3D_Q
DISTI # 512-HGTG30N60B3D_Q		ON SemiconductorIGBT Transistors 600V IGBT UFS N-Channel
RoHS: Not compliant		0
    HGTG30N60B3DFairchild Semiconductor Corporation 
    RoHS: Not Compliant    		16000
    • 1000:$5.0400
    • 500:$5.3100
    • 100:$5.5200
    • 25:$5.7600
    • 1:$6.2000
    HGTG30N60B3DFairchild Semiconductor Corporation 30
      HGTG30N60B3D_R4731Fairchild Semiconductor Corporation 5
        HGTG30N60B3DFairchild Semiconductor Corporation60 A, 600 V, N-CHANNEL IGBT, TO-2473
        • 2:$5.4000
        • 1:$8.1000
        HGTG30N60B3D
        DISTI # HGTG30N60B3D        		ON SemiconductorTransistor: IGBT,600V,30A,208W,TO247256
        • 1:$6.5700
        • 3:$5.9700
        • 10:$4.9600
        • 30:$4.3400
        • 120:$3.9400
        HGTG30N60B3D..
        DISTI # 1838984        		ON SemiconductorIGBT,N CH,600V,30A,TO-247
        RoHS: Compliant        		676
        • 100:£3.9100
        • 50:£4.2200
        • 10:£4.5100
        • 5:£5.2300
        • 1:£6.0700
        HGTG30N60B3D..
        DISTI # 1838984        		ON SemiconductorIGBT,N CH,600V,30A,TO-247
        RoHS: Compliant        		593
        • 250:$7.3400
        • 100:$7.6800
        • 25:$8.8500
        • 10:$9.2800
        • 1:$10.2700
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        可用性
        庫存:
        402
        訂購:
        2385
        輸入數量:
        HGTG30N60B3D的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$6.48
        US$6.48
        10
        US$5.85
        US$58.50
        25
        US$5.58
        US$139.50
        100
        US$4.85
        US$485.00
        250
        US$4.63
        US$1 157.50
        500
        US$4.22
        US$2 110.00
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