 |  | | |
| PartNumber | HGTG30N60A4 | HGTG30N60B3 | HGTG30N60A4D |
| Description | IGBT Transistors 600V N-Channel IGBT SMPS Series | IGBT Transistors 600V N-Channel IGBT UFS Series | IGBT Transistors 600V N-Channel IGBT SMPS Series |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.8 V | 1.45 V | 1.8 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 75 A | 60 A | 75 A |
| Pd Power Dissipation | 463 W | 208 W | 463 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | HGTG30N60A4 | HGTG30N60B3 | HGTG30N60A4D |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 75 A | 60 A | 75 A |
| Height | 20.82 mm | 20.82 mm | 20.82 mm |
| Length | 15.87 mm | 15.87 mm | 15.87 mm |
| Width | 4.82 mm | 4.82 mm | 4.82 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | 75 A | 60 A | 75 A |
| Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA | +/- 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 450 | 450 | 450 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | HGTG30N60A4_NL | HGTG30N60B3_NL | HGTG30N60A4D_NL |
| Unit Weight | 0.225401 oz | 0.225401 oz | 0.225401 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTG30N60A4 | IGBT Transistors 600V N-Channel IGBT SMPS Series | |
| HGTG30N60B3 | IGBT Transistors 600V N-Channel IGBT UFS Series | ||
| HGTG30N60B3D | IGBT Transistors 600V IGBT UFS N-Channel | ||
| HGTG30N60A4D | IGBT Transistors 600V N-Channel IGBT SMPS Series | ||
| HGTG30N60C3D | IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para | ||
ON Semiconductor |
HGTG30N60A4D | IGBT Transistors 600V N-Channel IGBT SMPS Series | |
| HGTG30N60C3D | IGBT 600V 63A 208W TO247 | ||
| HGTG30N60B3D | IGBT 600V 60A 208W TO247 | ||
| HGTG30N60A4 | IGBT 600V 75A 463W TO247 | ||
| HGTG30N60B3 | IGBT Transistors 600V N-Channel IGBT UFS Series | ||
| HGTG30B60A4D | 全新原裝 | ||
| HGTG30N100 | 全新原裝 | ||
| HGTG30N120 | 全新原裝 | ||
| HGTG30N120C3D | 全新原裝 | ||
| HGTG30N120CN | 全新原裝 | ||
| HGTG30N120CND | 全新原裝 | ||
| HGTG30N60 | 全新原裝 | ||
| HGTG30N60A | 全新原裝 | ||
| HGTG30N60A4 G30N60A4 | 全新原裝 | ||
| HGTG30N60A4D G30N60A4D | 全新原裝 | ||
| HGTG30N60A4D,30N60A4D | 全新原裝 | ||
| HGTG30N60A4D,G30N60A4D,G | 全新原裝 | ||
| HGTG30N60A4D,HGTG30N60A4 | 全新原裝 | ||
| HGTG30N60A4D-NL | 全新原裝 | ||
| HGTG30N60B3D G30N60B3D | 全新原裝 | ||
| HGTG30N60B3DNL | 全新原裝 | ||
| HGTG30N60B3D_R4731 | 全新原裝 | ||
| HGTG30N60B3_NL | - Bulk (Alt: HGTG30N60B3_NL) | ||
| HGTG30N60B5 | 全新原裝 | ||
| HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | ||
| HGTG30N60C3D_NL | - Bulk (Alt: HGTG30N60C3D_NL) | ||
| HGTG30N6S2D | 全新原裝 | ||
| HGTG32N60E2 | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247 | ||
| HGTG34N100E2 | Insulated Gate Bipolar Transistor, 55A I(C), 1000V V(BR)CES, N-Channel, TO-247 | ||
| HGTG30N60B3 G30N60B3 | 全新原裝 | ||
| HGTG30N60A4D-- | 全新原裝 | ||
| HGTG30N60B3D_Q | IGBT Transistors 600V IGBT UFS N-Channel |