IXFH20N60

Mfr. #:: IXFH20N60
製造商:: Littelfuse
描述:: MOSFET 600V 20A
生命週期:: 製造商新產品
數據表:: IXFH20N60 數據表
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ECAD Model:

產品屬性
屬性值

製造商: IXYS

產品分類: FET - 單

系列: IXFH20N60

打包: 管子

單位重量: 0.229281 oz

安裝方式: 通孔

商品名: 超場效應晶體管

包裝盒: TO-247-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 300 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 40 ns

上升時間: 43 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 20 A

Vds-漏-源-擊穿電壓: 600 V

Rds-On-Drain-Source-Resistance: 350 mOhms

晶體管極性: N通道

典型關斷延遲時間: 70 ns

典型開啟延遲時間: 20 ns

正向跨導最小值: 18 S

通道模式: 增強

Tags: IXFH20N6, IXFH20N, IXFH20, IXFH2, IXFH, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFH20N60 描述

***ical: Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-247AD

***ark: MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:151nC; No. of Transistors:1; On State Resistance Max:350mohm; Package / Case:TO-247; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:60A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:30mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g

Market price

型號	製造商	描述	庫存	價格
IXFH20N60 DISTI # IXFH20N60-ND	IXYS Corporation	MOSFET N-CH 600V 20A TO-247AD RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH20N60Q DISTI # IXFH20N60Q-ND	IXYS Corporation	MOSFET N-CH 600V 20A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH20N60 DISTI # 747-IXFH20N60	IXYS Corporation	MOSFET 600V 20A RoHS: Compliant	0
IXFH20N60Q DISTI # 747-IXFH20N60Q	IXYS Corporation	MOSFET 20 Amps 600V 0.35 Rds RoHS: Compliant	0
IXFH20N60	IXYS Corporation		16
IXFH20N60	IXYS Corporation	MOSFET Transistor, N-Channel, TO-247AD	73	31:$5.8110 4:$6.7050 1:$13.4100
IXFH20N60	IXYS Corporation	MOSFET Transistor, N-Channel, TO-247AD	7	4:$6.7050 2:$8.9400 1:$13.4100
IXFH20N60	IXYS Corporation	INSTOCK	100

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