SIHB30N60E-E3

SIHB30N60E-E3
Mfr. #:
SIHB30N60E-E3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
生命週期:
製造商新產品
數據表:
SIHB30N60E-E3 數據表
交貨:
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支付:
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HTML Datasheet:
SIHB30N60E-E3 DatasheetSIHB30N60E-E3 Datasheet (P4-P6)SIHB30N60E-E3 Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
29 A
Rds On - 漏源電阻:
125 mOhms
Vgs th - 柵源閾值電壓:
2.8 V
Vgs - 柵源電壓:
30 V
Qg - 門電荷:
85 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
250 W
配置:
單身的
頻道模式:
增強
打包:
管子
系列:
E
品牌:
威世 / Siliconix
秋季時間:
36 ns
產品類別:
MOSFET
上升時間:
32 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
63 ns
典型的開啟延遲時間:
19 ns
單位重量:
0.050717 oz
Tags
SIHB30N60E, SIHB30, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 29A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 29A D2PAK
***ark
N-CHANNEL 600V
型號 製造商 描述 庫存 價格
SIHB30N60E-E3
DISTI # SIHB30N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 29A D2PAK
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIHB30N60E-E3
    DISTI # SIHB30N60E-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin D2PAK - Tape and Reel (Alt: SIHB30N60E-E3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
      SIHB30N60E-E3
      DISTI # 781-SIHB30N60E-E3
      Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
      RoHS: Compliant
      0
        SIHB30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
        RoHS: Compliant
        Americas -
          圖片 型號 描述
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3-VISHAY

          RF Bipolar Transistors MOSFET N-Channel 600V
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY

          MOSFET N-CHAN 600V D2PAK
          SIHB30N60E-GE3-CUT TAPE

          Mfr.#: SIHB30N60E-GE3-CUT TAPE

          OMO.#: OMO-SIHB30N60E-GE3-CUT-TAPE-1190

          全新原裝
          SIHB30N60E

          Mfr.#: SIHB30N60E

          OMO.#: OMO-SIHB30N60E-1190

          全新原裝
          SIHB30N60E-GE3

          Mfr.#: SIHB30N60E-GE3

          OMO.#: OMO-SIHB30N60E-GE3-VISHAY

          MOSFET N-CH 600V 29A D2PAK
          SIHB30N60EGE3

          Mfr.#: SIHB30N60EGE3

          OMO.#: OMO-SIHB30N60EGE3-1190

          Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          可用性
          庫存:
          Available
          訂購:
          4000
          輸入數量:
          SIHB30N60E-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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